Amit S Nagra

US Patent:

6590691, Jul 8, 2003

Filed:

Jul 2, 2001

Appl. No.:

09/898197

Inventors:

Amit S. Nagra - Pasadena CA
Nathan G. Woodard - Pasadena CA

Assignee:

Phasebridge, Inc. - Pasadena CA

International Classification:

G02B 2600

US Classification:

359237, 359245

Abstract:

The present invention discloses high-speed, single-drive and dual-drive external optical modulation devices that reduce the voltage and power required to amplify and modulate electrical signals onto an optical carrier. Two primary components of an optical transmitter, namely, the modulator and driver, are integrated, and preferably hybridly integrated, in a single package, thereby eliminating many of the cable connector interfaces that add loss, complexity and cost to the system. Further, integration frees the devices from the standardized impedance (i. e. 50 ohm) constraints that reduce performance, thereby enabling the design of optimized, low voltage, hybridly integrated modulation devices.

US Patent:

20230038906, Feb 9, 2023

Filed:

Aug 3, 2022

Appl. No.:

17/817321

Inventors:

- Altrincham, GB
Amit Singh NAGRA - Altadena CA, US
Haydn Frederick JONES - London, GB

International Classification:

A61B 5/00
A61B 5/024

Abstract:

A system and method for positioning a sensor on a subject. In some embodiments, the system includes an instrument holder, the instrument holder being configured to be secured to a subject, and to hold an instrument temporarily.

US Patent:

20210311335, Oct 7, 2021

Filed:

Jun 18, 2021

Appl. No.:

17/352223

Inventors:

- Altrincham, GB
David Arlo Nelson - Fort Collins CO, US
Pradeep Srinivasan - Fremont CA, US
Amit Singh Nagra - Altadena CA, US
Aaron John Zilkie - Pasadena CA, US
Jeffrey Driscoll - San Jose CA, US
Aaron L. Birkbeck - San Diego CA, US

International Classification:

G02F 1/025
G02B 6/134
G02F 1/225

Abstract:

A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.

US Patent:

20210141172, May 13, 2021

Filed:

Nov 6, 2020

Appl. No.:

17/092151

Inventors:

- Altrincham, GB
Chia-Te Chou - Pasadena CA, US
William Vis - Pasadena CA, US
Amit Singh Nagra - Altadena CA, US
Hooman Abediasl - Thousand Oaks CA, US

International Classification:

G02B 6/42
B41F 16/00

Abstract:

An optoelectronic device. The device comprising: a silicon-on-insulator, SOI, wafer, the SOI wafer including a cavity and an input waveguide, the input waveguide being optically coupled into the cavity; and a mirror, located within the cavity and bonded to a bed thereof, the mirror including a reflector configured to reflect light received from the input waveguide in the SOI wafer.

US Patent:

20200264372, Aug 20, 2020

Filed:

May 4, 2020

Appl. No.:

16/866419

Inventors:

- London, GB
John Paul Drake - St. Ives, GB
Evie Kho - Espoo, FI
Damiana Lerose - Pasadena CA, US
Sanna Leena Mäkelä - Helsinki, FI
Amit Singh Nagra - Altadena CA, US

International Classification:

G02B 6/26
G02B 6/12
G02B 6/136
G02B 6/125

Abstract:

A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and applying a metal coating to the underside surface.

US Patent:

20200264377, Aug 20, 2020

Filed:

May 5, 2020

Appl. No.:

16/867372

Inventors:

- Oxford, GB
Amit Singh NAGRA - ALTADENA CA, US
Andrew George RICKMAN - MARLBOROUGH, GB
Thomas Pierre SCHRANS - TEMPLE CITY CA, US
Pradeep SRINIVASAN - FREMONT CA, US
Andrea TRITA - PASADENA CA, US
Aaron John ZILKIE - PASADENA CA, US

International Classification:

G02B 6/293
H01S 3/13
H01S 3/23
G02B 6/35

Abstract:

A reconfigurable spectroscopy system comprises tunable lasers and wavelength lockers to lock to accurate reference wavelengths. Band combiners with differently optimized wavelength ranges multiplex the optical signal over the time domain, to emit a plurality of reference wavelengths for spectroscopy applications. The power requirements are greatly reduced by multiplexing over the time domain in time slots which do not affect sampling and receiving of the spectroscopy data.

US Patent:

20200124878, Apr 23, 2020

Filed:

Aug 23, 2019

Appl. No.:

16/550141

Inventors:

- London, GB
Hooman Abediasl - Pasadena CA, US
Aaron L. Birkbeck - San Diego CA, US
Jeffrey Driscoll - San Jose CA, US
Haydn Frederick Jones - Reading, GB
Damiana Lerose - Pasadena CA, US
Amit Singh Nagra - Altadena CA, US
David Arlo Nelson - Fort Collins CO, US
DongYoon Oh - Alhambra CA, US
Pradeep Srinivasan - Fremont CA, US
Aaron John Zilkie - Pasadena CA, US

International Classification:

G02F 1/01
G02F 1/225
G02B 6/136
G02B 6/13
H01L 27/30
H01L 21/78
G01J 1/04

Abstract:

A Mach-Zehnder waveguide modulator. In some embodiments, the Mach-Zehnder waveguide modulator includes a first arm including a first optical waveguide, and a second arm including a second optical waveguide. The first optical waveguide includes a junction, and the Mach-Zehnder waveguide modulator further includes a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction.

US Patent:

20200012043, Jan 9, 2020

Filed:

Dec 1, 2017

Appl. No.:

16/465535

Inventors:

- London, GB
Damiana LEROSE - Pasadena CA, US
Amit Singh NAGRA - Altadena CA, US
Guomin YU - Glendora CA, US

International Classification:

G02B 6/12
G02F 1/025
H01L 31/0232

Abstract:

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.