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Earl Dwight Fuchs

age ~67

from Phoenix, AZ

Also known as:
  • Earl D Fuchs
  • Null Null
Phone and address:
4633 Wilshire Dr, Phoenix, AZ 85008
6028404847

Earl Fuchs Phones & Addresses

  • 4633 Wilshire Dr, Phoenix, AZ 85008 • 6028404847
  • Atascadero, CA
  • Scottsdale, AZ
  • Eaton, CO
  • 4633 E Wilshire Dr, Phoenix, AZ 85008 • 4802217539

Work

  • Position:
    Professional/Technical

Education

  • Degree:
    Graduate or professional degree

Emails

Us Patents

  • Cladded Conductor For Use In A Magnetoelectronics Device And Method For Fabricating The Same

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  • US Patent:
    6885074, Apr 26, 2005
  • Filed:
    Nov 27, 2002
  • Appl. No.:
    10/306250
  • Inventors:
    Mark A. Durlam - Chandler AZ, US
    Jeffrey H. Baker - Chandler AZ, US
    Brian R. Butcher - Gilbert AZ, US
    Mark F. Deherrera - Tempe AZ, US
    John J. D'Urso - Chandler AZ, US
    Earl D. Fuchs - Phoenix AZ, US
    Gregory W. Grynkewich - Gilbert AZ, US
    Kelly W. Kyler - Mesa AZ, US
    Jaynal A. Molla - Gilbert AZ, US
    J. Jack Ren - Phoenix AZ, US
    Nicholas D. Rizzo - Gilbert AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    H01L029/82
    H01L027/14
  • US Classification:
    257422, 257252
  • Abstract:
    A method for fabricating a cladded conductor () for use in a magnetoelectronics device is provided. The method includes providing a substrate () and forming a conductive barrier layer () overlying the substrate (). A dielectric layer () is formed overlying the conductive barrier layer () and a conducting line () is formed within a portion of the dielectric layer (). The dielectric layer () is removed and a flux concentrator () is formed overlying the conducting line ().
  • Cladded Conductor For Use In A Magnetoelectronics Device And Method For Fabricating The Same

    view source
  • US Patent:
    7105363, Sep 12, 2006
  • Filed:
    Mar 16, 2005
  • Appl. No.:
    11/082617
  • Inventors:
    Mark A. Durlam - Chandler AZ, US
    Jeffrey H. Baker - Chandler AZ, US
    Brian R. Butcher - Gilbert AZ, US
    Mark F. Deherrera - Tempe AZ, US
    John J. D'Urso - Chandler AZ, US
    Earl D. Fuchs - Phoenix AZ, US
    Gregory W. Grynkewich - Gilbert AZ, US
    Kelly W. Kyler - Mesa AZ, US
    Jaynal A. Molla - Gilbert AZ, US
    J. Jack Ren - Phoenix AZ, US
    Nicholas D. Rizzo - Gilbert AZ, US
  • Assignee:
    Freescale Semiconductor, Inc. - Austin TX
  • International Classification:
    H01L 21/00
  • US Classification:
    438 3, 438652, 438653, 438666, 257E21002
  • Abstract:
    A method for fabricating a cladded conductor () for use in a magnetoelectronics device is provided. The method includes providing a substrate () and forming a conductive barrier layer () overlying the substrate (). A dielectric layer () is formed overlying the conductive barrier layer () and a conducting line () is formed within a portion of the dielectric layer (). The dielectric layer () is removed and a flux concentrator () is formed overlying the conducting line ().
  • Semiconductor Filter Structure And Method Of Manufacture

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  • US Patent:
    7466212, Dec 16, 2008
  • Filed:
    Jun 16, 2006
  • Appl. No.:
    11/454387
  • Inventors:
    Sudhama Shastri - Phoenix AZ, US
    Ryan Hurley - Gilbert AZ, US
    Yenting Wen - Chandler AZ, US
    Emily M. Linehan - Gilbert AZ, US
    Mark A. Thomas - Negri Sembilan, MY
    Earl D. Fuchs - Phoenix AZ, US
  • Assignee:
    Semiconductor Components Industries, L. L. C. - Phoenix AZ
  • International Classification:
    H03H 9/00
  • US Classification:
    333186, 257532
  • Abstract:
    In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.
  • Method Of Forming A High Capacitance Diode And Structure Therefor

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  • US Patent:
    7666751, Feb 23, 2010
  • Filed:
    Sep 21, 2007
  • Appl. No.:
    11/859638
  • Inventors:
    David D. Marreiro - Phoenix AZ, US
    Sudhama C. Shastri - Phoenix AZ, US
    Gordon M. Grivna - Meza AZ, US
    Earl D. Fuchs - Phoenix AZ, US
  • Assignee:
    Semiconductor Components Industries, LLC - Phoenix AZ
  • International Classification:
    H01L 21/20
  • US Classification:
    438380, 438983, 257603, 257E29335, 257E21356
  • Abstract:
    In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
  • Method Of Forming A High Capacitance Diode And Structure Therefor

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  • US Patent:
    8143701, Mar 27, 2012
  • Filed:
    Dec 3, 2009
  • Appl. No.:
    12/630670
  • Inventors:
    David D. Marreiro - Phoenix AZ, US
    Sudhama C. Shastri - Phoenix AZ, US
    Gordon M. Grivna - Mesa AZ, US
    Earl D. Fuchs - Phoenix AZ, US
  • Assignee:
    Semiconductor Components Industries, LLC - Phoenix AZ
  • International Classification:
    H01L 21/20
  • US Classification:
    257603, 257E29335, 257E21356, 438380, 438963
  • Abstract:
    In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
  • Method Of Forming A High Capacitance Diode

    view source
  • US Patent:
    8222115, Jul 17, 2012
  • Filed:
    Feb 16, 2012
  • Appl. No.:
    13/398356
  • Inventors:
    David D. Marreiro - Phoeniz AZ, US
    Sudhama C. Shastri - Phoenix AZ, US
    Gordon M. Grivna - Mesa AZ, US
    Earl D. Fuchs - Phoenix AZ, US
  • Assignee:
    Semiconductor Components Industries, LLC - Phoenix AZ
  • International Classification:
    H01L 21/20
  • US Classification:
    438380, 438983, 257603, 257E29335, 257E21356
  • Abstract:
    In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device.
  • High Voltage Semiconductor Device And Method

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  • US Patent:
    49740504, Nov 27, 1990
  • Filed:
    May 30, 1989
  • Appl. No.:
    7/358215
  • Inventors:
    Earl D. Fuchs - Phoenix AZ
  • Assignee:
    Motorola Inc. - Schaumburg IL
  • International Classification:
    H01L 2704
    H01L 2712
    H01L 2906
    H01L 2702
  • US Classification:
    357 50
  • Abstract:
    An improved method and structure for high voltage semiconductor devices capable of blocking voltages of the order of 1000 volts and greater is described. In a preferred embodiment, a blanket P layer is formed in an N. sup. - epi-layer on an N. sup. + substrate. An annular groove is etched through the blanket P layer into the N. sup. - epi-layer. The bottom of the groove is doped N. sup. + using the same mask as for the first groove etch. A second groove is formed inside of and partly overlapping the first groove and extending to a greater depth than the first groove, but not through the epi-layer. The second groove is fileld with passivating material, metal electrodes are applied to the P. sup. + region and the N. sup. + substrate, and the devices separated at the N. sup.
  • Method Of Making High Voltage Semiconductor Device

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  • US Patent:
    52139948, May 25, 1993
  • Filed:
    Sep 17, 1990
  • Appl. No.:
    7/583527
  • Inventors:
    Earl D. Fuchs - Phoenix AZ
  • Assignee:
    Motorola, Inc. - Schaumburg IL
  • International Classification:
    H01L 2176
  • US Classification:
    437 65
  • Abstract:
    An improved method and structure for high voltage semiconductor devices capable of blocking voltages of the order of 1000 volts and greater is described. In a preferred embodiment, a blanket P layer is formed in an N. sup. - epi-layer on an N. sup. + substrate. An annular groove is etched through the blanket P layer into the N. sup. - epi-layer. The bottom of the groove is doped N. sup. + using the same mask as for the first groove etch. A second groove is formed inside of and partly overlapping the first groove and extending to a greater depth than the first groove, but not through the epi-layer. The second groove is filled with passivating material, metal electrodes are applied to the P. sup. + region and the N. sup. + substrate, and the devices separated at the N. sup.

Resumes

Earl Fuchs Photo 1

New Product Development Engineer At On Semiconductor

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Location:
Phoenix, Arizona Area
Industry:
Semiconductors
Experience:
ON Semiconductor (Public Company; Semiconductors industry): New Product Development Engineer,  (September 2005-Present) New product development/device engineer for EMI filters and protection devices in the Zener/Rectifier Wafer Fab. Responsible for the definition of the process ...
Earl Fuchs Photo 2

Earl Fuchs

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Youtube

Maserati Band "The World Outside" @ the Earl ...

Vid 1 - www.youtube.com Vidd 2 - www.youtube.com Name this Song!!

  • Category:
    Music
  • Uploaded:
    30 Jan, 2010
  • Duration:
    6m 22s

Maserati Band @ The Earl (1)

Video 2 - www.youtube.com This is the first song of the entire show at...

  • Category:
    Music
  • Uploaded:
    26 Jan, 2010
  • Duration:
    5m 55s

Maserati live at El Rey Theatre

Maserati opening up for Japan's Mono on October 13, 2009 RIP Jerry Fuchs

  • Category:
    Music
  • Uploaded:
    14 Oct, 2009
  • Duration:
    4m 43s

Jerry. Drums.

Jerry in the studio with Holy Ghost

  • Category:
    Entertainment
  • Uploaded:
    09 Sep, 2009
  • Duration:
    20s

KGB Documentary Part 3: Russian Spy Rings in ...

1981 www.amazon.com Watch the full film: thefilmarchived.... The GRU ...

  • Category:
    News & Politics
  • Uploaded:
    30 Nov, 2010
  • Duration:
    13m 54s

CIA Archives: Small Town Espionage - Soviet S...

More CIA films: thefilmarchived.... The GRU (military intelligence) r...

  • Category:
    Education
  • Uploaded:
    24 Feb, 2011
  • Duration:
    15m 29s

MASERATI "Show Me The Season" 10/24/09

at The Milestone Club's 40th Anniversary show Charlotte, NC RIP Jerry

  • Category:
    Music
  • Uploaded:
    10 Nov, 2009
  • Duration:
    9m 47s

Maserati - monoliths

Monoliths live at end of an ear; sxsw 2009

  • Category:
    Music
  • Uploaded:
    22 Mar, 2009
  • Duration:
    7m 16s

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