Sanjay Shinde - San Jose CA, US Yoshimitsu Kodaira - Tokyo, JP Taroh Furumochi - Utsunomiya-shi, JP
Assignee:
CANON ANELVA CORPORATION - Kawasaki-shi
International Classification:
H01F 41/14
US Classification:
216 22, 1563451
Abstract:
Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers in the device are etched by a mixed gas of a hydrogen gas and an inert gas such as Nwith using a mask of non-organic material such as Ta. As results, in a studied example, a MTJ taper angle is nearly vertical.
Process And Apparatus For Fabricating Magnetic Device
Sanjay Shinde - San Jose CA, US Yoshimitsu Kodaira - Tokyo, JP Taroh Furumochi - Tokyo, JP
Assignee:
Canon ANELVA Corporation - Kawasaki-shi
International Classification:
H01L 21/00
US Classification:
438 3, 15634539, 257E21001
Abstract:
Process and apparatus for fabricating a magnetic device is provided. Magnetic and/or nonmagnetic layers i n the device are etched by a mixed gas of a hydrogen gas and an inert gas such as Nwith using a mask of non-organic material such as Ta. As results, in a studied example, a MTJ taper angle is nearly vertical.
Method For Manufacturing Resistance Change Element
Yoshimitsu Kodaira - Tokyo, JP Tomoaki Osada - Tokyo, JP Sanjay Shinde - San Jose CA, US
Assignee:
CANON ANELVA CORPORATION - Kawasaki-shi
International Classification:
H01L 21/02
US Classification:
438382, 257E21004
Abstract:
The present invention provides a method for manufacturing a resistance change element that can reduce occurrence of corrosion without increasing a substrate temperature. A laminate film that includes a high melting-point metal film and a metal oxide film, is etched using a mask under a plasma atmosphere formed using any one of a mixture gas formed by adding at least one gas selected from the group consisting of Ar, He, Xe, Ne, Kr, O, O, N, HO, NO, NO, CO and COto at least one kind of gasified compound selected from alcohol and hydrocarbon or the gas compound.
Cyclical Physical Vapor Deposition Of Dielectric Layers
INTERNATIONAL BUSINESS MACHINES CORPORATION - , US - Kanagawa, JP Vamsi Paruchuri - Clifton Park NY, US Tuan A. Vo - Albany NY, US Takaaki Tsunoda - Albany NY, US Sanjay Shinde - San Ramon CA, US
Assignee:
CANON ANELVA CORPORATION - Kanagawa INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/02 H01L 21/28
US Classification:
438591, 438761
Abstract:
Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness.
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Everyone knows better of oneself and keeps...