Dariusz W Burak from 2156 Yearling Dr, Fort Collins, CO 80525, age 59

Resumes

Dariusz Burak

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Us Patents

Material Systems For Long Wavelength Lasers Grown On Gasb Or Inas Substrates
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US Patent:

6813297, Nov 2, 2004
Filed:

Jul 16, 2002
Appl. No.:

10/196872
Inventors:

Dariusz Burak - Fremont CA
Assignee:

Agilent Technologies, Inc. - Palo Alto CA
International Classification:

H01S 500
US Classification:

372 45, 372 46
Abstract:

A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of GaSb or InAs, and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 1. 2-1. 4 um. The quantum well is made of GaInSbP, GaInSbAs, AlInSbAs, or AlInSbP, and the barrier layers are made of AlInSbP, AlGaSbP, AlInSbAs, AlGaSbAs, or AlSbPAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (E and E ) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the substrate.

Vertical Tri-Color Sensor
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US Patent:

7623165, Nov 24, 2009
Filed:

Feb 28, 2006
Appl. No.:

11/362711
Inventors:

Russell W. Gruhlke - San Jose CA, US
Dariusz Burak - Fort Collins CO, US
Thomas E. Dungan - Fort Collins CO, US
Assignee:

Aptina Imaging Corporation - Grand Cayman
International Classification:

H04N 3/14
H04N 5/335
H04N 9/04
H01L 31/062
H01L 31/113
H01L 27/00
US Classification:

348272, 257290, 2502081
Abstract:

A vertical tri-color sensor having vertically stacked blue, green, and red pixels detects at least blue and green components of incident light by converting the blue and green components to surface plasmons.

Bulk Acoustic Resonator Comprising Non-Piezoelectric Layer
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US Patent:

8330325, Dec 11, 2012
Filed:

Jun 16, 2011
Appl. No.:

13/161946
Inventors:

Dariusz Burak - Fort Collins CO, US
Jyrki Kaitila - Riemerling, DE
Alexandre Shirakawa - San Jose CA, US
Martin Handtmann - Munich, DE
Phil Nikkel - Loveland CO, US
Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore
International Classification:

H03H 9/15
H03H 9/125
US Classification:

310320, 310321, 333187
Abstract:

In a representative embodiment, a bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer, wherein c-axis orientations of crystals of the first piezoelectric layer are substantially aligned with one another; a second piezoelectric layer disposed over the second electrode; a non-piezoelectric layer; and a third electrode disposed over the second piezoelectric layer.

Bulk Acoustic Resonator Comprising Non-Piezoelectric Layer And Bridge
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US Patent:

8350445, Jan 8, 2013
Filed:

Jun 24, 2011
Appl. No.:

13/168101
Inventors:

Alexandre Shirakawa - San Jose CA, US
Dariusz Burak - Fort Collins CO, US
Phil Nikkel - Loveland CO, US
Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore
International Classification:

H03H 9/25
US Classification:

310320, 310365, 333187
Abstract:

A bulk acoustic wave (BAW) resonator, comprises: a first electrode formed on a substrate; a piezoelectric layer formed on the first electrode; a second electrode formed on the first piezoelectric layer; a non-piezoelectric layer formed on the first electrode and adjacent to the piezoelectric layer; and a bridge formed between the non-piezoelectric layer and the first or second electrode.

Stacked Bulk Acoustic Resonator
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US Patent:

8575820, Nov 5, 2013
Filed:

Mar 29, 2011
Appl. No.:

13/074094
Inventors:

Alexandre Augusto Shirakawa - San Jose CA, US
Paul Bradley - Los Altos CA, US
Dariusz Burak - Fort Collins CO, US
Stefan Bader - Fort Collins CO, US
Chris Feng - Fort Collins CO, US
Assignee:

Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:

H01L 41/047
H03H 9/15
US Classification:

310320, 310363, 310364, 310365, 310366
Abstract:

A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.

Material Systems For Long Wavelength Lasers Grown On Inp Substrates
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US Patent:

20030231680, Dec 18, 2003
Filed:

Jun 14, 2002
Appl. No.:

10/173369
Inventors:

Dariusz Burak - Fremont CA, US
International Classification:

H01S005/00
H01S003/03
H01S003/08
US Classification:

372/045000, 372/096000
Abstract:

A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of InP and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 1.2-1.4 um. The quantum well is made of AlGaAsSb or GaAsSb, and the barrier layers are made of AlGaAsSb, AlInGaAs, or AlInAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (Eand E) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the InP substrate.

Stacked Acoustic Resonator Comprising A Bridge
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US Patent:

20120218055, Aug 30, 2012
Filed:

Mar 29, 2011
Appl. No.:

13/074262
Inventors:

Dariusz BURAK - Fort Collins CO, US
Alexandre SHIRAKAWA - San Jose CA, US
Stefan BADER - Fort Collins CO, US
Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore
International Classification:

H03H 9/02
US Classification:

333187
Abstract:

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.

Coupled Resonator Filter Comprising A Bridge
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US Patent:

20120218056, Aug 30, 2012
Filed:

Feb 28, 2011
Appl. No.:

13/036489
Inventors:

Dariusz Burak - Fort Collins CO, US
Assignee:

Avago Technologies Wireless IP (Singapore) Pte. Ltd. - Singapore
International Classification:

H03H 9/58
US Classification:

333191, 310322
Abstract:

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator.