David J Cooperberg

US Patent:

6344105, Feb 5, 2002

Filed:

Jun 30, 1999

Appl. No.:

09/345639

Inventors:

John E. Daugherty - Oakland CA
Neil Benjamin - Palo Alto CA
Jeff Bogart - Los Gatos CA
Vahid Vahedi - Albany CA
David Cooperberg - Fremont CA
Alan Miller - Moraga CA
Yoko Yamaguchi - Yokohama, JP

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 2100

US Classification:

156345

Abstract:

Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

US Patent:

RE39534, Mar 27, 2007

Filed:

Nov 22, 2002

Appl. No.:

10/302567

Inventors:

David Cooperberg - Mount Kisco NY, US
Richard A. Gottscho - Pleasanton CA, US
Vahid Vahedi - Albany CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G05B 13/02

US Classification:

700 28, 700 30, 700 31, 700 34, 700 47, 700 52, 700121, 702 81, 702 85, 702104, 703 6, 703 22, 438 5, 438 14

Abstract:

A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters. A set Sets of test conditions processes is are derived for which the profile evolution is governed by only a limited number of parameters. For each set of test conditions process, model test values are selected and a test substrate is substrates are actually subjected to a the test process processes defined by the test values , thereby creating a test surface profile profiles. The test values are used to generate an approximate profile prediction predictions and are adjusted to minimize the discrepancy between the test surface profile profiles and the approximate profile prediction predictions, thereby providing a final model of the profile evolution in terms of the process values.

US Patent:

7571697, Aug 11, 2009

Filed:

Sep 13, 2002

Appl. No.:

10/242795

Inventors:

Neil Benjamin - Palo Alto CA, US
David Cooperberg - Mount Kisco NY, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/00
C23F 1/00
H01L 21/306

US Classification:

118723I, 15634548

Abstract:

A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

US Patent:

7932181, Apr 26, 2011

Filed:

Jun 20, 2006

Appl. No.:

11/455671

Inventors:

Harmeet Singh - Fremont CA, US
David Cooperberg - Mount Kisco NY, US
Vahid Vahedi - Oakland CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23F 1/00
B44C 1/22
H01L 21/302

US Classification:

438689, 216 67, 216 68

Abstract:

A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.

US Patent:

8298336, Oct 30, 2012

Filed:

Apr 1, 2005

Appl. No.:

11/096820

Inventors:

Ing-Yann Wang - Moraga CA, US
Jaroslaw W. Winniczek - Daly City CA, US
David J. Cooperberg - Mount Kisco NY, US
Erik A. Edelberg - Castro Valley CA, US
Robert P. Chebi - San Carlos CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/455
C23C 16/458
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118715, 15634533, 15634534, 15634551, 118728

Abstract:

A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

US Patent:

8425682, Apr 23, 2013

Filed:

Sep 21, 2012

Appl. No.:

13/624558

Inventors:

Jaroslaw W. Winniczek - Daly City CA, US
David J. Cooperberg - Mount Kisco NY, US
Erik A. Edelberg - Castro Valley CA, US
Robert P. Chebi - San Carlos CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/455
C23C 16/458
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118715, 15634533, 15634534, 15634551, 118728

Abstract:

A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.

US Patent:

20030070620, Apr 17, 2003

Filed:

Dec 21, 2001

Appl. No.:

10/024208

Inventors:

David Cooperberg - Mount Kisco NY, US
Vahid Vahedi - Albany CA, US
Douglas Ratto - Santa Clara CA, US
Harmeet Singh - Berkeley CA, US
Neil Benjamin - East Palo Alto CA, US

International Classification:

C23F001/00
C23C016/00

US Classification:

118/7230AN, 156/345480

Abstract:

A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

US Patent:

20100041238, Feb 18, 2010

Filed:

Oct 23, 2009

Appl. No.:

12/605027

Inventors:

David J. Cooperberg - Mount Kisco NY, US
Vahid Vahedi - Albany CA, US
Douglas Ratto - Santa Clara CA, US
Harmeet Singh - Berkeley CA, US
Neil Benjamin - East Palo Alto CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/465

US Classification:

438710, 216 67, 15634533, 257E21485

Abstract:

A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.