Dimitri Daniel Krut from 17110 Clemons Dr, Van Nuys, CA 91436, age 60, Phone: 8189866811

Us Patents

Integrated Semiconductor Circuits On Photo-Active Germanium Substrates
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US Patent:

7151307, Dec 19, 2006
Filed:

Nov 20, 2003
Appl. No.:

10/718426
Inventors:

Karim S. Boutros - Moorpark CA, US
Nasser H. Karam - Northridge CA, US
Dimitri D. Krut - Encino CA, US
Moran Haddad - Winnetka CA, US
Assignee:

The Boeing Company - Chicago IL
International Classification:

H01L 31/0328
H01L 31/117
US Classification:

257616, 257189, 257201, 257613
Abstract:

A semiconductor device having at least one layer of a group III–V semiconductor material epitaxially deposited on a group III–V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III–V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.

Semiconductor Circuits And Devices On Germanium Substrates
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US Patent:

20020168809, Nov 14, 2002
Filed:

May 8, 2001
Appl. No.:

09/850773
Inventors:

Karim Boutros - Moorpark CA, US
Nasser Karam - Northridge CA, US
Dimitri Krut - Encino CA, US
Moran Haddad - Winnetka CA, US
International Classification:

H01L029/06
H01L031/0328
US Classification:

438/169000, 257/019000, 257/021000, 257/013000, 257/552000, 438/192000, 438/172000, 438/519000
Abstract:

A semiconductor device having at least one layer of a group III-V semiconductor material epitaxially deposited on a group III-V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III-V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.

Diffused Junction Photodetector And Fabrication Technique
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US Patent:

20030230761, Dec 18, 2003
Filed:

Jun 14, 2002
Appl. No.:

10/172310
Inventors:

Charles Morrison - La Crescenta CA, US
Rengarajan Sudharsanan - Stevenson Ranch CA, US
Moran Haddad - Winnetka CA, US
Dimitri Krut - Encino CA, US
Joseph Boisvert - Thousand Oaks CA, US
Richard King - Thousand Oaks CA, US
Nasser Karam - Northridge CA, US
International Classification:

H01L031/0336
US Classification:

257/184000
Abstract:

ABSTRACT A diffused junction semiconductor () for detecting light () at a predetermined wavelength is provided including a base () and an epitaxial structure () electrically coupled to the base (). The epitaxial structure () forms a p-n junction () in the base (). The epitaxial structure () includes at least one diffusion layer () electrically coupled to the base (). At least one of the diffusion layers () contributes impurities in at least a portion of the base () to form the p-n junction () during growth of the epitaxial structure (). A method for performing the same is also provided.

Solar Cell With An Electrically Insulating Layer Under The Busbar
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US Patent:

20040261838, Dec 30, 2004
Filed:

Jun 25, 2003
Appl. No.:

10/603703
Inventors:

Hector Cotal - Valencia CA, US
Dimitri Krut - Encino CA, US
Raed Sherif - Valencia CA, US
International Classification:

H01L031/00
US Classification:

136/256000, 136/259000
Abstract:

A solar cell includes a photovoltaic energy source, a frontside array of metallic gridlines deposited upon a front face of the photovoltaic energy source, and a busbar structure in electrical continuity with the frontside array of metallic gridlines. The busbar structure has an electrical insulator layer overlying and contacting the front face of the photovoltaic energy source, and a metallic busbar layer overlying and contacting the electrical insulator layer. The metallic busbar layer is in electrical continuity with the frontside array of metallic gridlines. The solar cell is preferably a concentrator solar cell.

Multijunction Laser Power Converter
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US Patent:

20060048811, Mar 9, 2006
Filed:

Sep 9, 2004
Appl. No.:

10/937807
Inventors:

Dimitri Krut - Encino CA, US
Rengarajan Sudharsanan - Stevenson Ranch CA, US
Nassar Karam - LaCanada CA, US
Richard King - Thousand Oaks CA, US
International Classification:

H01L 31/00
US Classification:

136249000, 136255000, 136262000
Abstract:

Laser power conversion with multiple stacked junctions or subcells are disclosed to produce increased output. Both vertical and horizontal integration are disclosed for flexible, efficient, and cost-effective laser power conversion. One embodiment of a laser power converter includes at least a first or top subcell that receives incident laser light, a second subcell below the first subcell that subsequently receives the laser light, and a tunnel junction between the first and second subcells.

Metamorphic Solar Cell Having Improved Current Generation
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US Patent:

20120240987, Sep 27, 2012
Filed:

Mar 22, 2011
Appl. No.:

13/069274
Inventors:

Richard R. KING - Thousand Oaks CA, US
Christopher M. FETZER - Valencia CA, US
Dimitri D. KRUT - Encino CA, US
Nasser H. KARAM - La Canada CA, US
Assignee:

THE BOEING COMPANY - Chicago IL
International Classification:

H01L 31/06
H01L 31/18
H01L 31/0336
US Classification:

136255, 257184, 438 57, 257E31005
Abstract:

A semiconductor device structure having increased photogenerated current density, and increased current output is disclosed. The device includes low bandgap absorber regions that increase the range of wavelengths at which photogeneration of charge carriers takes place, and for which useful current can be collected. The low bandgap absorber regions may be strain balanced by strain-compensation regions, and the low bandgap absorber regions and strain-compensation regions may be formed from the same ternary semiconductor family. The device may be a solar cell, subcell, or other optoelectronic device with a metamorphic or lattice-mismatched base layer, for which the low bandgap absorber region improves the effective bandgap combination of subcells and current balance within the multijunction cell, for higher efficiency conversion of the solar spectrum.

Metal Dendrite-Free Solar Cell
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US Patent:

20130240009, Sep 19, 2013
Filed:

Mar 18, 2012
Appl. No.:

13/423231
Inventors:

Xiaobo Zhang - Arcadia CA, US
Vincent A. Lim - Los Angeles CA, US
Hoon H. Lee - Valencia CA, US
John P. Serra - Camarillo CA, US
Uming T. Jeng - Rosemead CA, US
Steven M. Bunyan - Porter Ranch CA, US
Julie J. Hoskin - Santa Monica CA, US
Kent E. Barbour - Simi Valley CA, US
Dimitri D. Krut - Encino CA, US
Assignee:

The Boeing Company - Chicago IL
International Classification:

H01L 31/05
H01L 31/0224
US Classification:

136244, 136256
Abstract:

A solar cell assembly including a semiconductor wafer having a solar cell portion and a wing portion, wherein the wing portion is electrically isolated from the solar cell portion, and an electrical contact material positioned on the solar cell portion, wherein the wing portion is substantially free of the electrical contact material.

Use Of A Low Bandgap Absorber Region In A Laser Power Converter
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US Patent:

20200185559, Jun 11, 2020
Filed:

Dec 11, 2018
Appl. No.:

16/216449
Inventors:

- Chicago IL, US
Dimitri D. Krut - Encino CA, US
Assignee:

The Boeing Company - Chicago IL
International Classification:

H01L 31/0687
H01L 31/0725
H01L 31/0352
Abstract:

A low bandgap absorber region (LBAR) used in a laser power converter (LPC). The laser power converter is comprised of one or more subcells on a substrate, wherein at least one of the subcells has an emitter and base, with the low bandgap absorber region coupled between the emitter and base. The emitter and base are comprised of a material with a bandgap higher than a wavelength of incident laser light, and the low bandgap absorber region is comprised of a material with a bandgap lower than the emitter and base. The emitter and base are transparent to the incident laser light, and the low bandgap absorber region absorbs the incident laser light and generates a current in response thereto, such that the current is controlled by the material and thickness of the low bandgap absorber region. The low bandgap absorber region is configured to produce a current balanced to the subcells connected in series.