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Elon P Folkes

age ~52

from Meridian, ID

Also known as:
  • Elan P Folkes
  • Elon Folks
Phone and address:
2581 N Eureka Pl, Meridian, ID 83646

Elon Folkes Phones & Addresses

  • 2581 N Eureka Pl, Meridian, ID 83646
  • 2037 Windchime Dr, Meridian, ID 83642 • 2088552391
  • 14479 Redwick Dr, Boise, ID 83713 • 2089382190
  • 4476 Torrence Pl, Woodbridge, VA 22193 • 7035907493
  • 11260 Lady Jane Loop, Manassas, VA 20109
  • Provo, UT

Work

  • Company:
    Micron technology
    May 2012
  • Position:
    Global thin film metrology keg engineer

Education

  • School / High School:
    Utah Valley University
    1992 to 1995

Skills

Semiconductors • Design For Manufacturing • Manufacturing • Process Integration • Product Development • Root Cause Analysis • Dram • R&D • Process Simulation • Semiconductor Industry • Spc • Semiconductor Process • Ic • Microelectronics • Cvd • Field Service • Equipment Maintenance • Design of Experiments • Robotics • Electrical Engineering • Continuous Improvement • Automation • Testing • Cmos • Management • Flash Memory • Thin Films • Product Engineering • Lean Manufacturing • Plasma Etch • Engineering Management • Failure Analysis • Fmea • Analog • Etching • Optics • Silicon • Photolithography • Cross Functional Team Leadership • Characterization • Leadership • Pvd • Manufacturing Engineering • Circuit Design • Electro Mechanical • Sensors • Project Management • Hardware • Reliability • Rf

Industries

Semiconductors

Resumes

Elon Folkes Photo 1

Global Thin Film Metrology Keg Engineer

view source
Location:
Boise, ID
Industry:
Semiconductors
Work:
Micron Technology
Global Thin Film Metrology Keg Engineer

Micron Technology May 2011 - Apr 2012
Cmp Npi Engineer Iii

Micron Technology Oct 1995 - Nov 2008
Equipment Engineer

Micron Technology Mar 2004 - Apr 2006
Shift Lead Production Engineer
Education:
Utah Valley University 1992 - 1995
Manchester High School
Skills:
Semiconductors
Design For Manufacturing
Manufacturing
Process Integration
Product Development
Root Cause Analysis
Dram
R&D
Process Simulation
Semiconductor Industry
Spc
Semiconductor Process
Ic
Microelectronics
Cvd
Field Service
Equipment Maintenance
Design of Experiments
Robotics
Electrical Engineering
Continuous Improvement
Automation
Testing
Cmos
Management
Flash Memory
Thin Films
Product Engineering
Lean Manufacturing
Plasma Etch
Engineering Management
Failure Analysis
Fmea
Analog
Etching
Optics
Silicon
Photolithography
Cross Functional Team Leadership
Characterization
Leadership
Pvd
Manufacturing Engineering
Circuit Design
Electro Mechanical
Sensors
Project Management
Hardware
Reliability
Rf

Us Patents

  • Methods For Planarizing Workpieces, E.g., Microelectronic Workpieces

    view source
  • US Patent:
    7413500, Aug 19, 2008
  • Filed:
    Jun 21, 2006
  • Appl. No.:
    11/471975
  • Inventors:
    Carter Moore - Boise ID, US
    Elon Folkes - Boise ID, US
    Terry Castor - Boise ID, US
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    B24B 1/00
    B24B 49/00
    B24B 51/00
  • US Classification:
    451 5, 438 5, 451 6, 451 8, 451 10, 451 41
  • Abstract:
    This disclosure provides methods and apparatus for predictably changing the thickness of a microfeature workpiece. One implementation provides a planarizing method in which a first workpiece is planarized in first and second planarizing processes and a total change in thickness is determined. This thickness change is modified by a thickness offset associated with the second planarizing process and a material removal rate is calculated from this modified thickness change and the time on the first planarizer. A thickness of a second microfeature workpiece is measured and a target thickness of material to be removed is determined. A target planarizing time is then determined as a function of the target thickness reduction and the material removal rate.
  • Systems For Planarizing Workpieces, E.g., Microelectronic Workpieces

    view source
  • US Patent:
    7416472, Aug 26, 2008
  • Filed:
    Jun 21, 2006
  • Appl. No.:
    11/471974
  • Inventors:
    Carter Moore - Boise ID, US
    Elon Folkes - Boise ID, US
    Terry Castor - Boise ID, US
  • Assignee:
    Micron Technology, Inc. - Boise ID
  • International Classification:
    B24B 49/00
    B24B 51/00
  • US Classification:
    451 5, 438 5, 451 6, 451 8, 451 10
  • Abstract:
    This disclosure provides methods and apparatus for predictably changing the thickness of a microfeature workpiece. One implementation provides a planarizing method in which a first workpiece is planarized in first and second planarizing processes and a total change in thickness is determined. This thickness change is modified by a thickness offset associated with the second planarizing process and a material removal rate is calculated from this modified thickness change and the time on the first planarizer. A thickness of a second microfeature workpiece is measured and a target thickness of material to be removed is determined. A target planarizing time is then determined as a function of the target thickness reduction and the material removal rate.
  • Methods And Systems For Planarizing Workpieces, E.g., Microelectronic Workpieces

    view source
  • US Patent:
    20050202756, Sep 15, 2005
  • Filed:
    Mar 9, 2004
  • Appl. No.:
    10/796257
  • Inventors:
    Carter Moore - Boise ID, US
    Elon Folkes - Boise ID, US
    Terry Castor - Boise ID, US
  • International Classification:
    B24B049/00
  • US Classification:
    451005000
  • Abstract:
    This disclosure provides methods and apparatus for predictably changing the thickness of a microfeature workpiece. One implementation provides a planarizing method in which a first workpiece is planarized in first and second planarizing processes and a total change in thickness is determined. This thickness change is modified by a thickness offset associated with the second planarizing process and a material removal rate is calculated from this modified thickness change and the time on the first planarizer. A thickness of a second microfeature workpiece is measured and a target thickness of material to be removed is determined. A target planarizing time is then determined as a function of the target thickness reduction and the material removal rate.

Googleplus

Elon Folkes Photo 2

Elon Folkes

Lived:
Taoyuan, Taiwan
Meridian, Idaho
Manassas, Virginia
Toronto, Canada
Provo, Utah
Manchester, Jamaica
Work:
Micron - Engineer
Education:
Holmwood Technical High, Jamaica, East High School, Salt Lake City, Manchester High, Jamaica
Relationship:
Single
About:
Easy going Jamaican with a Technical aptitude who takes life as it comes. Everything happens for a reason.
Bragging Rights:
Father of Tess S. Folkes
Elon Folkes Photo 3

Elon Folkes

Lived:
Taoyuan, Taiwan
Meridian, Idaho
Manassas, Virginia
Toronto, Canada
Provo, Utah
Manchester, Jamaica
Work:
Micron - Engineer
Education:
Holmwood Technical High, Jamaica, East High School, Salt Lake City, Manchester High, Jamaica
Relationship:
Single
About:
Easy going Jamaican with a Technical aptitude who takes life as it comes. Everything happens for a reason.
Bragging Rights:
Father of Tess S. Folkes

Youtube

Elon Musk's "Loop" - It's bad, folks

go ahead. keep screaming "Elon Musk Is A Genius " at me. it only makes...

  • Duration:
    40m 6s

Elon's Back Yard Restart(1)

  • Duration:
    1m 56s

Elon's Back Yard Restart(2)

  • Duration:
    1m 44s

Skylar throwing down

A song at Tess's 12th birthday party. The Weekend.

  • Duration:
    3m 10s

MHS band Awards 2021 - Tess Folkes

  • Duration:
    42s

Elon Musk Dumps BILLIONS In Tesla Stock As Tw...

#ElonMusk #Tesla #Twitter #EmmaVigeland #MajorityReport #politics #new...

  • Duration:
    4m 34s

00031

  • Duration:
    51s

Elon Musk suspends journalists from Twitter f...

Fox News' Kevin Corke provides details on the suspension of journalist...

  • Duration:
    4m 18s

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