Frank W Cardone

US Patent:

7067855, Jun 27, 2006

Filed:

Dec 12, 2003

Appl. No.:

10/735167

Inventors:

Frank Cardone - Yonkers NY, US
Jack Oon Chu - Astoria NY, US
Khalid EzzEldin Ismail - White Plains NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 31/0328
H01L 31/0336
H01L 31/109
H01L 31/072

US Classification:

257190, 257 19, 257192, 257616

Abstract:

A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×10atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 Å from the first layer of greater than 1×10P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0. 5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET'S, and HBT's.

US Patent:

7906413, Mar 15, 2011

Filed:

Apr 28, 2006

Appl. No.:

11/414091

Inventors:

Frank Cardone - Yonkers NY, US
Jack Oon Chu - Astoria NY, US
Khalid EzzEldin Ismail - White Plains NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 31/0376
C30B 29/08

US Classification:

438486, 438489, 438532, 117936

Abstract:

A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×10atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 from the first layer of greater than 1×10P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0. 5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.

US Patent:

6723621, Apr 20, 2004

Filed:

Jun 30, 1997

Appl. No.:

08/885611

Inventors:

Frank Cardone - Yonkers NY
Jack Oon Chu - Astoria NY
Khalid EzzEldin Ismail - White Plains NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2120

US Classification:

438478, 438503

Abstract:

A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5Ã10 atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 from the first layer of greater than 1Ã10 P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0. 5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFETs, and HBTs.

Address:

116 Choir Ln, Westbury, NY 11590

VIN:

1HGCM66547A099628

Make:

HONDA

Model:

ACCORD

Year:

2007