Glenn Westwood

US Patent:

8183195, May 22, 2012

Filed:

Jan 28, 2008

Appl. No.:

12/522716

Inventors:

Glenn L. Westwood - Bethlehem PA, US

Assignee:

Avantor Performance Materials, Inc. - Phillipsburg NJ

International Classification:

G03F 7/42

US Classification:

510176, 510175, 252 791

Abstract:

Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0. 01% to about 5% by weight (expressed as % SiO) of at least one water-soluble metal ion-free silicate corrosion inhibitors; (d) from about 0. 01% to about 10% by weight of at least one metal chelating agent, and (e) from more than 0 to about 2. 0% by weight of at least one oxymetalate are provided in accordance with this invention. Such formulations are combined with a peroxide such that a peroxymetalate is formed to produce form a microelectronic cleaning composition. Used to remove contaminants and residue from microelectronic devices, such as microelectronic substrates.

US Patent:

8481472, Jul 9, 2013

Filed:

Oct 6, 2009

Appl. No.:

12/998296

Inventors:

Glenn Westwood - Edison NJ, US
Seong Jin Hong - Chungcheoungbuk-do, KR
Sang In Kim - Yongin, KR

Assignee:

Avantor Performance Materials, Inc. - Center Valley PA

International Classification:

C11D 7/50
C11D 11/00

US Classification:

510175, 510176

Abstract:

A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.

US Patent:

8497233, Jul 30, 2013

Filed:

Feb 18, 2010

Appl. No.:

13/138468

Inventors:

Glenn Westwood - Edison NJ, US

Assignee:

Avantor Performance Materials, Inc. - Center Valley PA

International Classification:

C11D 7/50
C11D 11/00

US Classification:

510175, 510176

Abstract:

A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65 C. , at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.

US Patent:

8557757, Oct 15, 2013

Filed:

Jan 14, 2010

Appl. No.:

13/138467

Inventors:

Chien-Pin S. Hsu - Basking Ridge NJ, US
Glenn Westwood - Edison NJ, US
William R. Gemmill - Bethlehem PA, US

Assignee:

Avantor Performance Materials, Inc. - Phillipsburg NJ

International Classification:

C11D 7/50

US Classification:

510175, 510176

Abstract:

A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.

US Patent:

20030130127, Jul 10, 2003

Filed:

Jan 9, 2002

Appl. No.:

10/044831

Inventors:

Patrick Hentges - Savoy IL, US
Laura Greene - Urbana IL, US
Margaret Pafford - Yardley PA, US
Glenn Westwood - Urbana IL, US
Walter Klemperer - Champaign IL, US

International Classification:

C04B002/00
H01B001/00
H01F001/00

US Classification:

505/100000

Abstract:

A method of making a superconducting structure includes depositing a metal alkoxide on a surface of a metal and hydrolyzing the metal alkoxide on the surface to form a pinhole-free film. The metal is a superconductor. The metal alkoxide may be a compound of formula (I):where M is zirconium or hafnium, and the purity of the compound is at least 97% as measured by NMR spectroscopy.

US Patent:

20090036611, Feb 5, 2009

Filed:

Apr 21, 2008

Appl. No.:

12/106840

Inventors:

Jonathan James Wilker - Wellesleym MA, US
Glenn Westwood - Bethlehem PA, US
Trinity Noel Horton - Mentor OH, US

International Classification:

C08L 29/02
C08F 12/08
C08L 41/00
C08L 25/08

US Classification:

5253285, 526313, 5253288

Abstract:

A class of bioinspired, cross linking polymers, created by working catechol functionalities into the backbone of a bulk polymer, is disclosed. Varied cross linking groups may be incorporated into different polymer backbones, and subsequently reacted with an array of reagents. An adhesive composition comprising a copolymer, the copolymer comprising pendant dihydroxyphenyl groups; and a crosslinking agent selected from the group consisting of, for example, oxidants, enzymes, metals, and light. A method of preparing an adhesive composition comprising copolymerizing a first monomer comprising pendant dihydroxy-protected dihydroxyphenyl groups; deprotecting the dihydroxy-protected dihydroxyphenyl groups; crosslinking the dihydroxyphenyl groups with a crosslinking agent.

US Patent:

20150170936, Jun 18, 2015

Filed:

Jun 21, 2013

Appl. No.:

14/408431

Inventors:

- Center Valley PA, US
Glenn Westwood - Edison NJ, US

International Classification:

H01L 21/56
C09D 7/12
H01L 21/02
C09D 7/00

Abstract:

The present invention is a new formulation and process for treating TiN semiconductor devices having a high aspect ratio structure formed thereon. The new composition is designed to be used in the chip making process between cleaning a wet etched memory device and its final rinse/drying process. It is intended to include the treatment in order to prevent collapse of the high aspect ratio TiN structure found on the semiconductor device.

US Patent:

20140248781, Sep 4, 2014

Filed:

May 31, 2012

Appl. No.:

14/122793

Inventors:

- Center Valley PA, US
Glenn Westwood - Edison NJ, US

Assignee:

Avantor Performance Materials, Inc. - Center Valley PA

International Classification:

B81C 1/00
C09K 13/00

US Classification:

438746, 252 791

Abstract:

A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-κ dielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant.