Gregg B Kruaval

US Patent:

20080265444, Oct 30, 2008

Filed:

Apr 22, 2008

Appl. No.:

12/107181

Inventors:

James D. Parsons - Reno NV, US
Gregg B. Kruaval - Fernley NV, US

International Classification:

H01L 23/29
H05K 3/00
H01L 21/56

US Classification:

257788, 427 964, 438127, 438107, 257758, 257E23117, 257E21502

Abstract:

An aluminum nitride (AlN) thin-film is applied over thin-film metallic circuitry such as an environmental sensor, on the side edges of electrode pads, and/or over some or all of the surface area of a substrate. The thin-film acts to protect the encapsulated structures from exposure to oxidation and from reducing and vacuum environments, electrically insulates the encapsulated structures from other structures, and helps to securely adhere the structures to the substrate surface. The AlN thin-film can also enable multiple IC layers to be stacked on top of each other, with AlN thin-film interlayers employed between IC layers such that each IC layer is separated and electrically insulated from adjacent layers.