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Jagadeesh S Moodera

age ~71

from Somerville, MA

Also known as:
  • Jagadeesh Moodera
  • H A
  • Jagadeesh Berera
  • Moodera Jagadeesh
53 Berkeley St, Somerville, MA 02143

Jagadeesh Moodera Phones & Addresses

  • 53 Berkeley St, Somerville, MA 02143
  • Roslindale, MA
  • Cambridge, MA

Us Patents

  • Josephson Junction Device For Superconductive Electronics With A Magnesium Diboride

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  • US Patent:
    7741634, Jun 22, 2010
  • Filed:
    Mar 26, 2008
  • Appl. No.:
    12/055593
  • Inventors:
    Heejae Shim - Medford NY,
    Jagadeesh S. Moodera - Somerville MA,
  • Assignee:
    Massachusetts Institute of Technology - Cambridge MA
  • International Classification:
    H01L 23/48
    H01L 29/08
    H01L 21/00
  • US Classification:
    257 36, 257E39006, 438 2, 505190, 505329
  • Abstract:
    A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.
  • Organic Spin Transport Device

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  • US Patent:
    20080152952, Jun 26, 2008
  • Filed:
    Dec 4, 2007
  • Appl. No.:
    11/949988
  • Inventors:
    Tiffany S. Santos - Downers Grove IL,
    Joo Sang Lee - Seoul,
    Hyunja Shim - Cambridge MA,
    Jagadeesh S. Moodera - Somerville MA,
  • International Classification:
    G11B 5/39
    H01L 21/02
  • US Classification:
    4288111, 438 3, 438 99, 257 40, 257E51024, 257E21002
  • Abstract:
    The organic spin transport device, such as a magnetic tunnel junction or a transistor, includes at least two ferromagnetic material electrodes. At least one organic semiconductor structure is formed between the at least two ferromagnetic material electrodes. At least one buffer layer is positioned between the at least one organic semiconductor structure and the at least two ferromagnetic material electrodes. The at least one buffer layer reduces spin scattering between the at least two ferromagnetic material electrodes and the at least one organic semiconductor structure. The device exhibits a magnetoresistive effect that depends on the relative magnetization of the two ferromagnetic material electrodes.
  • Spin Filter Spintronic Devices

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  • US Patent:
    20090141409, Jun 4, 2009
  • Filed:
    Dec 3, 2007
  • Appl. No.:
    11/949208
  • Inventors:
    Tiffany S. Santos - Downers Grove IL,
    Jagadeesh S. Moodera - Somerville MA,
  • International Classification:
    G11B 5/127
  • US Classification:
    3603242
  • Abstract:
    A spin filter transistor having a semiconductor structure. A spin injector including a first spin filter tunnel barrier is positioned on the semiconductor structure. A spin detector including a second spin filter tunnel barrier is positioned on the semiconductor. Highly polarized spins injected from the spin injector are transported through the semiconductor structure, and are detected at the spin detector. The magnitude of the spin current depends on the relative magnetic alignment of the first spin filter tunnel barrier and the second spin filter tunnel barrier.
  • Switching Mechanism Of Magnetic Storage Cell And Logic Unit Using Current Induced Domain Wall Motions

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  • US Patent:
    20140062530, Mar 6, 2014
  • Filed:
    Mar 9, 2011
  • Appl. No.:
    13/044045
  • Inventors:
    Jagadeesh S. Moodera - Somerville MA,
  • Assignee:
    MASSACHUSETTS INSTITUTE OF TECHNOLOGY - Cambridge MA
  • International Classification:
    G11C 11/16
    H01L 43/12
  • US Classification:
    326 37, 438 3, 365158
  • Abstract:
    A magnetic memory cell is provided that includes a free layer that is pinned on both of its sides to form one or more domain wall structures. The one or more domain wall structures define one or more logic states by controlling the motion of the one or more domain wall structures.
  • Electron Tunneling Device Using Ferromagnetic Thin Films

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  • US Patent:
    56299222, May 13, 1997
  • Filed:
    Mar 21, 1995
  • Appl. No.:
    8/407761
  • Inventors:
    Jagadeesh S. Moodera - Somerville MA
    Terrilyn Wong - Cambridge MA
    Lisa Kinder - Charleston WV
    Robert H. Meservey - Lexington MA
  • Assignee:
    Massachusetts Institute of Technology - Cambridge MA
  • International Classification:
    G11B 900
    G11C 1115
    H01L 2722
  • US Classification:
    369126
  • Abstract:
    Ferromagnetic/insulator/ferromagnetic tunneling has been shown to give over 10% change in the junction resistance with H less than 100 Oe, at room temperature but decreases at high dc-bias across the junction. Using such junctions as magnetic sensors or memory elements would have several advantages; it is a trilayer device and does not strongly depend on the thickness of FM electrodes or the tunnel barrier; submicron size is possible with high junction resistance and low power dissipation. The magnitude of the effect is consistent with the simple model of spin-polarized tunneling between ferromagnets.
  • Tunnel Junction Device For Storage And Switching Of Signals

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  • US Patent:
    58353143, Nov 10, 1998
  • Filed:
    Nov 8, 1996
  • Appl. No.:
    8/747152
  • Inventors:
    Jagadeesh S. Moodera - Somerville MA
    Janusz Nowak - Somerville MA
    Lisa Kinder - Boston MA
    Patrick LeClair - Cambridge MA
  • Assignee:
    Massachusetts Institute of Technology - Cambridge MA
  • International Classification:
    G11B 539
    G11C 1100
  • US Classification:
    360113
  • Abstract:
    Ferromagnetic-insulator-ferromagnetic trilayer junctions show magnetoresistance (JMR) effects ranging from about 16% to several hundred percent at room temperature. Larger effects are observed when the actual tunneling resistance (R. sub. T) is comparable to electrode film resistance (R. sub. L) over the junction area in cross-geometry junction measurements. The geometrically enhanced large JMR can be qualitatively explained by the nonuniform current flow over the function area when R. sub. T is comparable to R. sub. L, in the cross-geometry junction structure. For a fixed junction area, the effective junction resistance (R. sub. J) can be varied from less than 1 ohm to several kilohms by controlling the thickness of the insulating layer or by appropriately selecting ferromagnetic films. The trilayer tunnel junctions of the present invention are nonvolatile, stable and are reproducible.

Wikipedia References

Jagadeesh Moodera Photo 1

Jagadeesh Moodera

Work:
Area of science:

Physicist


Company:

West Virginia University • Massachusetts Institute of Technology faculty

Education:
Studied at:

Indian Institute of Technology Madras • University of Mysore

Skills & Activities:
Achieved status:

Indian emigrant


Ascribed status:

American of Indian descent

Classmates

Jagadeesh Moodera Photo 2

Moodera Jagadeesh | Memor...

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News

New Material Shows High Potential For Quantum Computing

New material shows high potential for quantum computing

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  • "It is highly nontrivial to find a material system that is naturally a topological superconductor," said Peng Wei, an assistant professor of physics and astronomy and a condensed matter experimentalist, who co-led the study, appearing in Physical Review Letters, with Jagadeesh Moodera and Patrick Le
  • Date: Jun 28, 2019
  • Category: Science
  • Source: Google

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