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Janet M Brunsilius

age ~53

from San Diego, CA

Also known as:
  • Janet Marie Brunsilius
  • Jm Brunsilius
Phone and address:
11239 Avenida De Los Lobos, San Diego, CA 92127

Janet Brunsilius Phones & Addresses

  • 11239 Avenida De Los Lobos, San Diego, CA 92127
  • Rancho Santa Fe, CA
  • 3658 Camino Marglesa, Escondido, CA 92025
  • Sanger, CA
  • Vista, CA
  • Lakewood, CO
  • Poway, CA

Work

  • Company:
    Akm semiconductor
    1997 to 2000
  • Position:
    Analog ic design engineer

Education

  • Degree:
    Masters
  • School / High School:
    Uc San Diego
  • Specialities:
    Engineering

Skills

Circuit Design • Mixed Signal • Analog Circuit Design • Integrated Circuit Design • Analog • Cmos • Ic • Semiconductors • Asic • Adcs • Cadence Virtuoso • Soc • Verilog • Low Power Design • Pcb Design • Dac • Integrated Circuits • Pll

Industries

Semiconductors

Us Patents

  • Dynamically-Driven Deep N-Well Circuit

    view source
  • US Patent:
    20100001787, Jan 7, 2010
  • Filed:
    Jul 2, 2008
  • Appl. No.:
    12/166559
  • Inventors:
    Janet M. Brunsilius - Escondido CA, US
    Stephen R. Kosic - San Diego CA, US
    Corey D. Petersen - Poway CA, US
  • International Classification:
    H03K 3/01
    H01L 21/336
  • US Classification:
    327534, 438197, 257E21409
  • Abstract:
    A circuit includes an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, and a first well switch configured to selectively connect the n-well to a predetermined voltage in response to an enable phase of a first switching signal. The first well switch can be configured to connect the n-well to the predetermined voltage during the enable phase of the first switching signal and to electrically float the n-well during a non-enable phase of the first switching signal.
  • Dynamically Driven Deep N-Well Circuit

    view source
  • US Patent:
    20110025407, Feb 3, 2011
  • Filed:
    Oct 12, 2010
  • Appl. No.:
    12/902896
  • Inventors:
    Janet M. BRUNSILIUS - Escondido CA, US
    Stephen R. KOSIC - San Diego CA, US
    Corey D. PETERSEN - Poway CA, US
  • Assignee:
    ANALOG DEVICES, INC. - Norwood MA
  • International Classification:
    H03K 3/01
  • US Classification:
    327534
  • Abstract:
    A circuit can include an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, a circuit node, and a connection element connecting the n-well to the circuit node. The connection element can include a diode having an anode terminal connected to the circuit node and a cathode terminal connected to the n-well, a resistor having a first terminal connected to the circuit node and a second terminal connected to the n-well, a conductor directly connecting the n-well to the circuit node, or a well switch configured to connect the n-well to the circuit node during an enable phase of a switching signal and to electrically float the n-well during a non-enable phase of the switching signal. The diode can include a diode-connected transistor. The circuit node can be configured to receive a predetermined voltage having a magnitude equal to or greater than an upper supply voltage.

Resumes

Janet Brunsilius Photo 1

Analog And Mixed-Signal Design Engineer

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Location:
San Diego, CA
Industry:
Semiconductors
Work:
Akm Semiconductor 1997 - 2000
Analog Ic Design Engineer

Analog Devices 1997 - 2000
Analog and Mixed-Signal Design Engineer
Education:
Uc San Diego
Masters, Engineering
Uc San Diego
Bachelors, Bachelor of Science, Electrical Engineering
Skills:
Circuit Design
Mixed Signal
Analog Circuit Design
Integrated Circuit Design
Analog
Cmos
Ic
Semiconductors
Asic
Adcs
Cadence Virtuoso
Soc
Verilog
Low Power Design
Pcb Design
Dac
Integrated Circuits
Pll

Mylife

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Janet Brunsilius

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Youtube

InnovATEBIO Leadership Institute with Dr. Jan...

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    30m 23s

Upper botox,goodbye wrinkles

Upper botox goodbye angry face and wrinkles.

  • Duration:
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Q&A with Janet Yellen, Lucrezia Reichlin, and...

Janet Yellen, now a Distinguished Fellow in Residence at the Hutchins ...

  • Duration:
    1h 2m 16s

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