Jeremy Donaldson - Corvallis OR Martha A. Truninger - Corvallis OR Jeffrey S. Obert - Corvallis OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B41J 205
US Classification:
347 65, 347 92
Abstract:
The described embodiments relate to a slotted substrate and methods of forming same. One exemplary method patterns a hardmask on a first substrate surface sufficient to expose a first area of the first surface and forms a slot portion in the substrate through less than an entirety of the first area of the first surface. The slot portion has a cross-sectional area at the first surface that is less than a cross-sectional area of the first area. After forming the slot portion, the method etches the substrate to remove material from within the first area to form a fluid-handling.
Slotted Substrates And Methods And Systems For Forming Same
Jeremy Donaldson - Corvallis OR Eric L. Nikkel - Philomath OR Jeffrey S. Obert - Corvallis OR Jeffrey R. Pollard - Corvallis OR Jeff Hess - Corvallis OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B41J 205
US Classification:
347 65, 347 92
Abstract:
Methods and systems for forming compound slots in a substrate are described. In one exemplary implementation, a method forms a plurality of slots in a substrate. The method also etches a trench in the substrate contiguous with the plurality of slots to form a compound slot.
Jeffrey Scott Obert - Corvallis OR Eric L. Nikkel - Philomath OR Kenneth M. Kramer - Corvallis OR Steven D Leith - Albany OR
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B41J 204
US Classification:
216 27, 216 17, 216 41, 347 65
Abstract:
A method of manufacturing a slotted substrate includes forming a masking layer over a first surface of a substrate, and patterning and etching the masking layer to form a hole therethrough. The first layer is deposited over the masking layer and in the hole. The first layer is patterned and etched to form a plug in the hole. A second surface of the substrate that is opposite the first surface is continuously etched until a bottom surface of the plug is substantially exposed and a slot in the substrate is substantially formed.
Thomas H. Ottenheimer - Philomath OR, US Martha A. Truninger - Corvallis OR, US Jeffrey S. Obert - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B41J002/135 B41J002/015
US Classification:
347 44, 347 20
Abstract:
The described embodiments relate to a slotted substrate for use in a fluid ejecting device. One embodiment includes a substrate, and a slot received in the substrate. The slot has a central region and one or more terminal region(s). The central region extends at least in part along a pair of sidewalls. Individual terminal region(s) being defined by a terminal sidewall at least a portion of which extends away from both sidewalls of the central region.
James Z. Guo - Corvallis OR, US Adel Jilani - Corvallis OR, US Steve P. Hanson - Albany OR, US Jeffrey S. Obert - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
G02B 26/08 G02B 26/00
US Classification:
358290, 359291, 359223, 359224
Abstract:
A light modulator device includes a charge plate; a reflective plate and post, the post supporting the reflective plate parallel relative to the charge plate such that a gap is formed between the charge plate and the reflective plate, the gap being relatively smaller on a first side than on a second side when the reflective plate is parallel to the charge plate.
Slotted Substrates And Methods And Systems For Forming Same
Jeremy Donaldson - Corvallis OR, US Eric L. Nikkel - Philomath OR, US Jeffrey S. Obert - Corvallis OR, US Jeffrey R. Pollard - Corvallis OR, US Jeff Hess - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B41J 2/135 B41J 2/05
US Classification:
347 44, 347 65
Abstract:
Methods and systems for forming compound slots in a substrate are described. In one exemplary implementation, a method forms a plurality of slots in a substrate. The method also etches a trench in the substrate contiguous with the plurality of slots to form a compound slot.
Jeffrey S. Obert - Corvallis OR, US Thomas H. Ottenheimer - Philomath OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
B41J 2/05
US Classification:
347 65
Abstract:
The described embodiments relate to slotted substrates and methods of making the slotted substrates. One exemplary method patterns a first set of dummy features in a first layer positioned over a first surface of a substrate and patterns a second set of dummy features in a second layer positioned over the first layer. After the method patterns the first set of dummy features and the second set of dummy features, the method further forms a slot in the substrate, at least in part, by allowing an etchant to pass through the first and second sets of dummy features to the first surface.
Methods For Controlling Feature Dimensions In Crystalline Substrates
Steven D. Leith - Albany OR, US Jeffrey S. Obert - Corvallis OR, US Eric L. Nikkel - Philomath OR, US Kenneth M. Kramer - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, LP. - Houston TX
International Classification:
H01L 21/302 H01L 21/461
US Classification:
438733, 438689
Abstract:
A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.