Abstract:
A motor-winding driver circuit includes a high-side double-diffused metal-oxide-semiconductor (DMOS) field-effect transistor (FET) connected between a direct-current (DC) power supply node and a driver output node, and a low-side DMOS FET connected between the driver output node and ground. A high-side drive circuit and a low-side drive circuit regulate the driver output voltage to prevent a parasitic bipolar PNP transistor in the high-side FET from conducting, so that latchup is avoided. A parasitic N+/P-substrate diode in the low-side FET is also prevented from conducting. The low-side and high-side driver circuits have additional circuitry causing them to act as active clamp circuits during extreme over- or under-voltage conditions. A body-switching circuit connects the body of the high-side DMOS FET to the driver output node during normal operation, and connects the body to the DC supply node when the driver output voltage exceeds the DC source voltage.