Kenichi Nagai

US Patent:

55453872, Aug 13, 1996

Filed:

Jun 7, 1995

Appl. No.:

8/488103

Inventors:

David W. Keck - Moses Lake WA
Kenichi Nagai - Moses Lake WA
Yoshifumi Yatsurugi - Moses Lake WA
Hiroshi Morihara - Vancouver WA
Junji Izawa - Kanagawa, JP

Assignee:

Advanced Silcon Materials, Inc. - Moses Lake WA

International Classification:

C01B 3302

US Classification:

423348

Abstract:

Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

US Patent:

RE369365, Oct 31, 2000

Filed:

Aug 13, 1998

Appl. No.:

9/133933

Inventors:

David W. Keck - Butte MT
Kenichi Nagai - Moses Lake WA
Yoshifumi Yatsurugi - Fujisawa, JP
Hiroshi Morihara - Gresham OR
Junji Izawa - Hadano, JP
Renzin Paljor Yuthok - Moses Lake WA

Assignee:

Advanced Silicon Materials, Inc. - Moses Lake WA

International Classification:

C01B 3302

US Classification:

423348

Abstract:

Disclosed are. [. a. ]. processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

US Patent:

54783968, Dec 26, 1995

Filed:

Aug 26, 1994

Appl. No.:

8/296964

Inventors:

David W. Keck - Moses Lake WA
Kenichi Nagai - Moses Lake WA
Yoshifumi Yatsurugi - Moses Lake WA
Hiroshi Morihara - Vancouver WA
Junji Izawa - Hadano, JP

Assignee:

Advanced Silicon Materials, Inc. - Moses Lake WA

International Classification:

C23C 1600
C01B 3302

US Classification:

118719

Abstract:

Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.

US Patent:

53824199, Jan 17, 1995

Filed:

Sep 28, 1992

Appl. No.:

7/953480

Inventors:

Kenichi Nagai - Moses Lake WA
Hiroshi Morihara - Vancouver WA
Junji Izawa - Hadano, JP

Assignee:

Advanced Silicon Materials, Inc. - Moses Lake WA

International Classification:

C01B 3302

US Classification:

423348

Abstract:

Disclosed is a process for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications, while maintaining the purity of a highly refined monosilane gas inside the reactor. The equipment includes a reactor vessel which encloses powder catchers consisting of cylindrical water jackets. Also within the vessel is a cylindrical water jacket which concentrically surrounds the powder catchers and which defines multiple reaction chambers. Control is effected in such a way that the temperature distribution in different sections inside the reactor is as follows in the ascending order: the powder catcher walls, the walls of the water jacket which defines the reaction chambers, and the lower wall of the vessel cover. Part of the monosilane gas is ejected horizontally from a plurality of gas nozzles, is agitated by a descending gas flow generated around the powder catchers, and ascends inside the reaction chambers at a uniform concentration, thereby causing polycrystalline silicon rods to be grown around silicon starter filaments in a short time. The silicon powder generated in this process adheres to the coolest wall surfaces, which are those of the powder catchers, and is thereby collected.