David W. Keck - Moses Lake WA Kenichi Nagai - Moses Lake WA Yoshifumi Yatsurugi - Moses Lake WA Hiroshi Morihara - Vancouver WA Junji Izawa - Kanagawa, JP
Assignee:
Advanced Silcon Materials, Inc. - Moses Lake WA
International Classification:
C01B 3302
US Classification:
423348
Abstract:
Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.
Production Of High-Purity Polycrystalline Silicon Rod For Semiconductor Applications
David W. Keck - Butte MT Kenichi Nagai - Moses Lake WA Yoshifumi Yatsurugi - Fujisawa, JP Hiroshi Morihara - Gresham OR Junji Izawa - Hadano, JP Renzin Paljor Yuthok - Moses Lake WA
Assignee:
Advanced Silicon Materials, Inc. - Moses Lake WA
International Classification:
C01B 3302
US Classification:
423348
Abstract:
Disclosed are. [. a. ]. processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.
Production Of High-Purity Polycrystalline Silicon Rod For Semiconductor Applications
David W. Keck - Moses Lake WA Kenichi Nagai - Moses Lake WA Yoshifumi Yatsurugi - Moses Lake WA Hiroshi Morihara - Vancouver WA Junji Izawa - Hadano, JP
Assignee:
Advanced Silicon Materials, Inc. - Moses Lake WA
International Classification:
C23C 1600 C01B 3302
US Classification:
118719
Abstract:
Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.
Production Of High-Purity Polycrystalline Silicon Rod For Semiconductor Applications
Kenichi Nagai - Moses Lake WA Hiroshi Morihara - Vancouver WA Junji Izawa - Hadano, JP
Assignee:
Advanced Silicon Materials, Inc. - Moses Lake WA
International Classification:
C01B 3302
US Classification:
423348
Abstract:
Disclosed is a process for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications, while maintaining the purity of a highly refined monosilane gas inside the reactor. The equipment includes a reactor vessel which encloses powder catchers consisting of cylindrical water jackets. Also within the vessel is a cylindrical water jacket which concentrically surrounds the powder catchers and which defines multiple reaction chambers. Control is effected in such a way that the temperature distribution in different sections inside the reactor is as follows in the ascending order: the powder catcher walls, the walls of the water jacket which defines the reaction chambers, and the lower wall of the vessel cover. Part of the monosilane gas is ejected horizontally from a plurality of gas nozzles, is agitated by a descending gas flow generated around the powder catchers, and ascends inside the reaction chambers at a uniform concentration, thereby causing polycrystalline silicon rods to be grown around silicon starter filaments in a short time. The silicon powder generated in this process adheres to the coolest wall surfaces, which are those of the powder catchers, and is thereby collected.