Kenneth F Thrun

US Patent:

45825815, Apr 15, 1986

Filed:

May 9, 1985

Appl. No.:

6/731819

Inventors:

Marie C. Flanigan - Lockport NY
Stephen M. Bobbio - Hamburg NY
Robert F. Aycock - Clarence NY
Ralph L. DePrenda - Amherst NY
Kenneth M. Thrun - Buffalo NY

Assignee:

Allied Corporation - Morris Township, Morris County NJ

International Classification:

C03C 1500
C23C 1500

US Classification:

204192E

Abstract:

BF. sub. 3 based mixtures for selectively etching thin layers of silicon dioxide over silicon for use in the plasma etch process for integrated circuits manufacture is disclosed. In the process, when trace amounts of formaldehyde are added to the etch system the rate on oxide inceases markedly. The effect on the silicon is not substantial. The optional addition of an inert diluent gas did not substantially change these results.

US Patent:

46157646, Oct 7, 1986

Filed:

Nov 5, 1984

Appl. No.:

6/668052

Inventors:

Stephen M. Bobbio - Winterville GA
Marie C. Flanigan - Lockport NY
Kenneth M. Thrun - Buffalo NY
Ralph L. DePrenda - Amherst NY

Assignee:

Allied Corporation - Morris Township, Morris County NJ

International Classification:

B44C 122
C03C 1500
C03C 2506
H01L 21306

US Classification:

156643

Abstract:

A gaseous mixture of SF. sub. 6, a nitriding gas component and an oxidizer gas component is disclosed as an effective SiO. sub. 2 etchant having enhanced selectively for use in either the plasma or reactive ion etch process. By adding an oxidizing gas to the SF. sub. 6 nitriding gas plasma etchant, the selectively for SiO. sub. 2 over silicon or polysilicon is marked improved. The optional addition of an inert diluent gas did not substantially change these results.

US Patent:

44655525, Aug 14, 1984

Filed:

Aug 11, 1983

Appl. No.:

6/522437

Inventors:

Stephen M. Bobbio - Hamburg NY
Marie C. Flanigan - Lockport NY
Kenneth M. Thrun - Cheektowaga NY

Assignee:

Allied Corporation - Morris Township, Morris County NJ

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

A gaseous mixture of SF. sub. 6 and a nitriding component such as NH. sub. 3 is disclosed as an effective selective SiO. sub. 2 etchant for use in either the plasma or reactive ion etch process. By adding NH. sub. 3 to the SF. sub. 6, which is a known effective plasma etchant for silicon or poly-silicon, the silicon etch rate decreases while the oxide rate is effectively constant. At about 14% nitriding gas component, the rates are equivalent and for higher nitriding gas fractions, the silicon dioxide rate dominates. The optional addition of an inert diluent gas did not substantially change these results. The addition of hydrogen to the gaseous SF. sub. 6 /nitriding component mixture retards the etch rate on silicon still further and may increase the selectivity.