Kurt Andrew Carlsen

US Patent:

6821489, Nov 23, 2004

Filed:

Oct 10, 2000

Appl. No.:

09/685382

Inventors:

Kurt A. Carlsen - Burlington VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B01D 5334

US Classification:

422171, 422169, 422173

Abstract:

A system and method for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber ( ). The system includes a CVD abatement apparatus ( ) and a resin-type adsorber ( ). The CVD abatement apparatus comprises an enclosure ( ) that defines a chamber ( ) for receiving the exhaust gas. The enclosure contains a plurality of removable substrates ( ) arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

US Patent:

7252858, Aug 7, 2007

Filed:

Feb 17, 2004

Appl. No.:

10/780341

Inventors:

Kurt A. Carlsen - Burlington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23C 16/00

US Classification:

4272481, 422168, 422169, 422170, 422171, 422172, 422205, 422228, 118715, 423210, 423223

Abstract:

A system and method for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber (). The system includes a CVD abatement apparatus () and a resin-type absorber (). The CVD abatement apparatus comprises an enclosure () that defines a chamber () for receiving the exhaust gas. The enclosure contains a plurality of removable substrates () arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the absorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

US Patent:

7533357, May 12, 2009

Filed:

Jun 2, 2006

Appl. No.:

11/421863

Inventors:

Kurt A. Carlsen - Burlington VT, US
Amol A. Joshi - Essex Junction VT, US
Faraydon Pakbaz - Milton VT, US
Sanjay Upreti - Lexington KY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 17/50

US Classification:

716 4, 716 5, 716 8

Abstract:

A method of estimating decaps required for an IC during an initial floorplanning design phase begins by obtaining voltage variation waveforms for a plurality of nodes in a power distribution network of the IC. Next, the method computes a minimum value for each of the voltage variation waveforms and selects voltage variation waveforms below a minimum threshold value. Following this, an FDA is performed on the voltage variation waveforms below the minimum threshold value to create a set of frequency values. This involves performing an FFT on each of the voltage variation waveforms to obtain frequency domain data, wherein frequencies that cause a drop in voltage in the plurality of nodes are filtered. The method then sorts the frequency domain data, wherein the frequency domain data is arranged in order based on amplitude value, total power, frequency components, and/or amplitude of imaginary components.

US Patent:

8438520, May 7, 2013

Filed:

Aug 29, 2011

Appl. No.:

13/219813

Inventors:

Kurt A. Carlsen - Burlington VT, US
Charles S. Chiu - Essex Junction VT, US
Umberto Garofano - Essex Junction VT, US
Ze Gui Pang - Shanghai, CN
Eric W. Tremble - Jericho VT, US
David Toub - Winooski VT, US
Ivan L. Wemple - Shelburne VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 17/50

US Classification:

716115, 716133

Abstract:

Methods, systems, computer programs, etc. , determine the required number of decoupling capacitors, and approximate locations for the decoupling capacitors, for a region of an integrated circuit. Switching elements of the region are entered into a simulation program running on a computerized device. Also, a power distribution model of the region is entered into the simulation program, and a power-supply voltage compression target is entered into the simulation program. These methods, systems, etc. , generate an upper number of decoupling capacitors required to satisfy the compression target when all the switching elements concurrently switch. For each switching element, the methods, systems, etc. , generate a specific number of decoupling capacitors required to satisfy the compression when only the element switches, calculate a fraction of the specific number to the upper number, assign the fraction of the total number of decoupling capacitors to each switching circuit element, and place the fraction of the total number of decoupling capacitors in electrical proximity to the element.

US Patent:

20120125260, May 24, 2012

Filed:

Apr 19, 2007

Appl. No.:

11/737447

Inventors:

Kurt A. Carlsen - Burlington VT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

C23C 16/56

US Classification:

118724, 118722

Abstract:

A system for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber. The system includes a CVD abatement apparatus and a resin-type adsorber. The CVD abatement apparatus comprises an enclosure that defines a chamber for receiving the exhaust gas. The enclosure contains a plurality of removable substrates arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use.

US Patent:

62537830, Jul 3, 2001

Filed:

Oct 24, 2000

Appl. No.:

9/695361

Inventors:

Kurt A. Carlsen - Burlington VT
James McManus - Danbury CT
James Dietz - Danbury CT

Assignee:

International Business Machines - Armonk NY
Advanced Technology Materials, Inc. - Danbury CT

International Classification:

G05D 706

US Classification:

137 14

Abstract:

A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve.

US Patent:

61552895, Dec 5, 2000

Filed:

May 7, 1999

Appl. No.:

9/307650

Inventors:

Kurt A. Carlsen - Burlington VT
James McManus - Danbury CT
James Dietz - Danbury CT

Assignee:

International Business Machines - Armonk NY
Advanced Technology Materials, Inc. - Danbury CT

International Classification:

G05D 706

US Classification:

137457

Abstract:

A sub-atmospheric gas delivery system (100) with a backflow control apparatus (10) for preventing backflow into the sub-atmospheric gas source (14). The gas delivery system includes three fluidly coupled sticks: a purge stick (120), a process gas delivery stick (124) and an evacuation stick (130). The backflow control apparatus comprises a gas line (26) fluidly coupling the sub-atmospheric gas source to a chamber (50), a valve (20) attached to the sub-atmospheric gas source for blocking fluid communication between the gas source and the gas line upon receipt of a first signal, a flow restrictor (R) in fluid communication with the gas line and positioned between the valve and the chamber, and first and second pressure transducers (P1 and P2) in fluid communication with the gas line and positioned on either side of the flow restrictor. Each transducer is capable of generating a signal representative of pressure. The backflow control apparatus further includes a valve controller unit (40) connected to the first and second pressure transducers and the valve.