Search

Lawrence E Felton

age ~63

from Albany, NY

Also known as:
  • Lawrence D Felton
  • Lawrencw E Felton
  • Larry Felton
  • Felton Felton
  • Richard Boettinger
Phone and address:
2 Bryn Mawr Ct, Albany, NY 12211
5184519159

Lawrence Felton Phones & Addresses

  • 2 Bryn Mawr Ct, Albany, NY 12211 • 5184519159
  • Troy, NY
  • 16 Bender Ln, Delmar, NY 12054
  • 15 Alexander Rd, Hopkinton, MA 01748 • 5084358151
  • 104 Meeting House Path, Ashland, MA 01721 • 5088812133
  • 2 Bryn Mawr Ct, Albany, NY 12211 • 5084358151

Work

  • Position:
    Administration/Managerial

Education

  • Degree:
    Associate degree or higher

Us Patents

  • Method And Device For Protecting Micro Electromechanical Systems Structures During Dicing Of A Wafer

    view source
  • US Patent:
    6759273, Jul 6, 2004
  • Filed:
    Dec 5, 2001
  • Appl. No.:
    10/006967
  • Inventors:
    Lawrence E. Felton - Hopkinton MA
    Jing Luo - Lexington MA
  • Assignee:
    Analog Devices, Inc. - Norwood MA
  • International Classification:
    H01L 2144
  • US Classification:
    438113, 438114, 438458, 438460, 438464
  • Abstract:
    A wafer cap protects micro electromechanical system (âMEMSâ) structures during a dicing of a MEMS wafer to produce individual MEMS dies. A MEMS wafer is prepared having a plurality of MEMS structure sites thereon. Upon the MEMS wafer, the wafer cap is mounted to produce a laminated MEMS wafer. The wafer cap is recessed in areas corresponding to locations of the MEMS structure sites on the MEMS wafer. The capped MEMS wafer can be diced into a plurality of MEMS dies without causing damage to or contaminating the MEMS die.
  • Mems Capping Method And Apparatus

    view source
  • US Patent:
    6893574, May 17, 2005
  • Filed:
    Oct 23, 2001
  • Appl. No.:
    10/002953
  • Inventors:
    Lawrence E. Felton - Hopkinton MA, US
    Peter W. Farrell - Lunenburg MA, US
    Jing Luo - Lexington MA, US
    David J. Collins - Windham NH, US
    John R. Martin - Foxborough MA, US
    William A. Webster - Tewksbury MA, US
  • International Classification:
    C23F001/00
    H01L021/44
    H01L021/48
    H01L021/50
  • US Classification:
    216 2, 438113
  • Abstract:
    A MEMS capping method and apparatus uses a cap structure on which is formed a MEMS cavity, a cut capture cavity, and a cap wall. The cap wall is essentially the outer wall of the MEMS cavity and the inner wall of the cut capture cavity. The cap structure is bonded onto a MEMS structure such that the MEMS cavity covers protected MEMS components. The cap structure is trimmed by cutting through to the cut capture cavity from the top of the cap structure without cutting all the way through to the MEMS structure.
  • Fiber-Attached Optical Devices With In-Plane Micromachined Mirrors

    view source
  • US Patent:
    6931170, Aug 16, 2005
  • Filed:
    Oct 18, 2002
  • Appl. No.:
    10/274496
  • Inventors:
    Chang-Han Yun - Boston MA, US
    Shanti Bhattacharya - Chennai, IN
    Yakov Reznichenko - Newton MA, US
    John R. Martin - Foxborough MA, US
    Lawrence E. Felton - Hopkinton MA, US
    Jeffrey Swift - Andover MA, US
    Kieran P. Harney - Andover MA, US
    Michael W. Judy - Wakefield MA, US
  • Assignee:
    Analog Devices, Inc. - Norwood MA
  • International Classification:
    G02B006/26
    G02B006/42
  • US Classification:
    385 18, 385 47
  • Abstract:
    A fiber-attached optical device with in-plane micromachined mirrors includes a cover having at least one reflector formed on one side and a substrate having a plurality of micromachined optical mirrors formed substantially on a single plane on a side facing toward the mirrored side of the cover. The micromachined optical mirrors are controllable to reflect optical signals between a plurality of optical fiber segments via the at least one reflector. The plurality of optical fiber segments can be attached to either the cover or the substrate so as to form an integrated package including the substrate, the cover, and the plurality of optical fiber segments. The mirrors can be controlled to variably attenuate the optical signals.
  • Fabricating Integrated Micro-Electromechanical Systems Using An Intermediate Electrode Layer

    view source
  • US Patent:
    6933163, Aug 23, 2005
  • Filed:
    Sep 27, 2002
  • Appl. No.:
    10/259173
  • Inventors:
    Chang-Han Yun - Boston MA, US
    Lawrence E. Felton - Hopkinton MA, US
    Maurice S. Karpman - Brookline MA, US
    John A. Yasaitis - Lexington MA, US
    Michael W. Judy - Wakefield MA, US
    Colin Gormley - Belfast, GB
  • Assignee:
    Analog Devices, Inc. - Norwood MA
  • International Classification:
    H01L021/00
  • US Classification:
    438 48
  • Abstract:
    An intermediate electrode layer is used to fabricate an integrated micro-electromechanical system. An intermediate electrode layer is formed on an integrated circuit wafer. The intermediate electrode layer places drive electrodes a predetermined height above the surface of the integrated circuit wafer. A micro-electromechanical system wafer having micromachined optical mirrors is bonded to the integrated circuit wafer such that the drive electrodes are positioned a predetermined distance from the optical mirrors.
  • Mems Device With Conductive Path Through Substrate

    view source
  • US Patent:
    6936918, Aug 30, 2005
  • Filed:
    Apr 19, 2004
  • Appl. No.:
    10/827680
  • Inventors:
    Kieran P. Harney - Andover MA, US
    Lawrence E. Felton - Hopkinton MA, US
    Thomas Kieran Nunan - Carlisle MA, US
    Susan A. Alie - Stoneham MA, US
    Bruce Wachtmann - Concord MA, US
  • Assignee:
    Analog Devices, Inc. - Norwood MA
  • International Classification:
    H01L023/12
  • US Classification:
    257704, 257777, 257730, 257774, 257750, 257754
  • Abstract:
    A MEMS device has at least one conductive path extending from the top facing side of its substrate (having MEMS structure) to the bottom side of the noted substrate. The at least one conductive path extends through the substrate as noted to electrically connect the bottom facing side with the MEMS structure.
  • Optical Switching Apparatus And Method Of Assembling Same

    view source
  • US Patent:
    6940636, Sep 6, 2005
  • Filed:
    Sep 20, 2001
  • Appl. No.:
    09/957117
  • Inventors:
    Lawrence E. Felton - Hopkinton MA, US
  • Assignee:
    Analog Devices, Inc. - Norwood MA
  • International Classification:
    G02B026/08
    G02F001/29
  • US Classification:
    359298, 359290, 359291
  • Abstract:
    In an optical switching apparatus having a mirror structure bonded to a substrate, the gap between the mirror structure and the substrate is controlled by mechanical standoffs placed between the mirror structure and the substrate. The mirror structure is bonded to the substrate using solder. The mechanical standoffs are formed from a material having a higher melting point than that of the solder. The mirror structure is bonded to the substrate under pressure at a temperature between the melting point of the solder and the melting point of the mechanical standoffs.
  • Fabricating Complex Micro-Electromechanical Systems Using A Flip Bonding Technique

    view source
  • US Patent:
    6964882, Nov 15, 2005
  • Filed:
    Sep 27, 2002
  • Appl. No.:
    10/259188
  • Inventors:
    Chang-Han Yun - Boston MA, US
    Lawrence E. Felton - Hopkinton MA, US
    Maurice S. Karpman - Brookline MA, US
    John A. Yasaitis - Lexington MA, US
    Michael W. Judy - Wakefield MA, US
    Colin Gormley - Belfast, GB
  • Assignee:
    Analog Devices, Inc. - Norwood MA
  • International Classification:
    H01L023/12
  • US Classification:
    438108, 438455
  • Abstract:
    A flip-bonding technique is used to fabricate complex micro-electromechanical systems. Various micromachined structures are fabricated on the front side of each of two wafers. One of the wafers is flipped over and bonded to the other wafer so that the front sides of the two wafers are bonded together in a flip-stacked configuration.
  • Static Dissipation Treatments For Optical Package Windows

    view source
  • US Patent:
    7033672, Apr 25, 2006
  • Filed:
    Mar 19, 2002
  • Appl. No.:
    10/101016
  • Inventors:
    John R. Martin - Foxborough MA, US
    Maurice Karpman - Brookline MA, US
    Lawrence E. Felton - Hopkinton MA, US
  • Assignee:
    Analog Devices, Inc. - Norwood MA
  • International Classification:
    B32B 27/18
    B32B 27/30
    B32B 33/00
    G02B 26/00
  • US Classification:
    428422, 428457, 428500, 359224, 359225, 359291, 359295, 345 31
  • Abstract:
    An optically transparent conductive material is used for static dissipation of a cover material for an optical switching device. The optically transparent conductive material is deposited directly or indirectly on the cover material. The optically transparent conductive material forms an electrically continuous film. The optically transparent conductive material can also be used for anti-reflection.

Lawyers & Attorneys

Lawrence Felton Photo 1

Lawrence Felton - Lawyer

view source
ISLN:
907473396
Admitted:
1976
University:
University of Nebraska at Omaha
Law School:
University of Texas at Austin, J.D.

Resumes

Lawrence Felton Photo 2

Lawrence Felton

view source
Lawrence Felton Photo 3

Lawrence Felton

view source
Name / Title
Company / Classification
Phones & Addresses
Lawrence Felton
Chief Technology Officer, Vice-President
Evergreen Solar, Inc
Mfg Semiconductors/Related Devices · Mfg Solar Cells · Solar Energy Equipment-Manufac
138 Bartlett St, Marlboro, MA 01752
5082290437, 5083572221, 5085976800, 5082290747
Lawrence Felton
Crystal IS
Semiconductors · Manufactures Electronic Components · Mfg Electronic Components · Religious Organization
70 Cohoes Ave, Green Island, NY 12183
Attn: President 70 Cohoes Ave, Troy, NY 12183
70 Cohoes Ave, Troy, NY 12183
5182717375, 5182717394

Googleplus

Lawrence Felton Photo 4

Lawrence Felton

Youtube

Justus Lawrence vs Jack Felton - Mens Team Fi...

2010 NBL Super Grands in Sacramento, CA on December 27th. Mens Team Fi...

  • Category:
    Sports
  • Uploaded:
    27 Dec, 2010
  • Duration:
    2m 42s

2010 NBL Supergrands - Justus Lawrence v Jack...

Men's team sparring. Bay Area's Best v Team All Stars.

  • Category:
    Sports
  • Uploaded:
    29 Dec, 2010
  • Duration:
    2m 44s

Illumination

Eastern Orthodox Baptism at Saint Lawrence Orthodox Church in Felton, ...

  • Category:
    Music
  • Uploaded:
    24 Nov, 2006
  • Duration:
    5m 10s

FILMCLUB at Young Film Critics Awards 2009

Harry Potter star Tom Felton presented two lucky FILMCLUB members with...

  • Category:
    Travel & Events
  • Uploaded:
    19 Oct, 2009
  • Duration:
    2m 56s

Tom Felton and Chris Felton 2006 Carp Tourney...

This is Chris and Tom just pretty much talking about Tom's lastest fil...

  • Category:
    Entertainment
  • Uploaded:
    26 Aug, 2006
  • Duration:
    1m 40s

Scotts Valley Saint Lawrence Orthodox Church

FatherJohn Of Domascus.

  • Duration:
    6m 1s

Cobra King - First Tank Into Bastogne 1944

The fascinating story of 'Cobra King', a Sherman tank that was first t...

  • Duration:
    12m 15s

November 26, 2022

  • Duration:
    12s

Classmates

Lawrence Felton Photo 5

Lawrence Felton

view source
Schools:
Waccamaw High School Pawleys Island SC 2002-2006
Lawrence Felton Photo 6

Lawrence Felton, Clevelan...

view source
Lawrence Felton 1960 graduate of East Technical High School in Cleveland, OH
Lawrence Felton Photo 7

Lawrence Felton, San anto...

view source
Lawrence Felton 1999 graduate of John Jay High School in San antonio, TX
Lawrence Felton Photo 8

Lutcher High School, Lutc...

view source
Graduates:
Sean Roussel (1994-1998),
Lawrence Felton (1981-1985),
Alice Copponex (1960-1964)
Lawrence Felton Photo 9

Waccamaw High School, Paw...

view source
Graduates:
Lawrence Felton (2002-2006),
Matt Turner (1997-2001),
Tyese Carr (1994-1998),
Stacey Everett (1996-2000),
Kenyatta Grimmage (1996-2000)
Lawrence Felton Photo 10

Texas A&M University ...

view source
Graduates:
Lawrence Felton (1986-1987),
Dave Johnson (1974-1979),
Christi Schreckengost (1988-1992)
Lawrence Felton Photo 11

Felton Lawrence Beasley, ...

view source
Felton Lawrence Beasley 1965 graduate of Gary High School in Gary, TX
Lawrence Felton Photo 12

East Technical High Schoo...

view source
Graduates:
Lawrence Felton (1957-1960),
Harvey Booker (1964-1966),
Chauncey Berry (1966-1969),
Edward Fritz (1954-1957),
Trishelle Phillips (1994-1998)

Flickr

Myspace

Lawrence Felton Photo 15

Lawrence Felton

view source
Locality:
a little place called lacombe, Louisiana
Birthday:
1946

Get Report for Lawrence E Felton from Albany, NY, age ~63
Control profile