Linying Cui

US Patent:

20230030927, Feb 2, 2023

Filed:

Oct 3, 2022

Appl. No.:

17/959074

Inventors:

- Santa Clara CA, US
Rajinder DHINDSA - Pleasanton CA, US
James ROGERS - Los Gatos CA, US
Daniel Sang BYUN - Campbell CA, US
Evgeny KAMENETSKIY - Santa Clara CA, US
Yue GUO - Redwood City CA, US
Kartik RAMASWAMY - San Jose CA, US
Valentin N. TODOROW - Palo Alto CA, US
Olivier LUERE - Sunnyvale CA, US
Linying CUI - Cupertino CA, US

International Classification:

H01J 37/32
H01L 21/311
H01L 21/3065
H01L 21/683

Abstract:

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

US Patent:

20210313156, Oct 7, 2021

Filed:

Jun 18, 2021

Appl. No.:

17/351977

Inventors:

- Santa Clara CA, US
Linying CUI - Cupertino CA, US
Rajinder DHINDSA - Pleasanton CA, US

International Classification:

H01J 37/32
H01L 21/67
H01L 21/683
H01L 21/687
H01L 21/3065

Abstract:

Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

US Patent:

20200402776, Dec 24, 2020

Filed:

Sep 1, 2020

Appl. No.:

17/009670

Inventors:

- Santa Clara CA, US
Linying CUI - Cupertino CA, US
Rajinder DHINDSA - Pleasanton CA, US

International Classification:

H01J 37/32
H01L 21/67
H01L 21/683
H01L 21/687
H01L 21/3065

Abstract:

Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

US Patent:

20200251313, Aug 6, 2020

Filed:

Feb 1, 2019

Appl. No.:

16/265186

Inventors:

- Santa Clara CA, US
Linying CUI - Cupertino CA, US
Rajinder DHINDSA - Pleasanton CA, US

International Classification:

H01J 37/32
H01L 21/67
H01L 21/683
H01L 21/687
H01L 21/3065

Abstract:

Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma assisted processing thereof. In one embodiment a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.