Abstract:
An SI. sub. 1 I. sub. 2 M (semiconductor-insulator. sub. 1 -insulator. sub. 2 -metal) memory structure, containing an impurity such as tungsten concentrated in a region including the interface ("I. sub. 1 I. sub. 2 ") region between the I. sub. 1 and I. sub. 2 region, is fabricated by depositing an oxide of the impurity, such as tungsten trioxide, on the then exposed, I. sub. 1 layer prior to fabricating the I. sub. 2 layer. The oxide of the impurity, such as tungsten trioxide, can be advantageously deposited by means of reactive evaporation.