Marwan Albarghouti
age ~51
from Halfmoon, NY
- Also known as:
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- Marwan A Albarghouthi
- Marwan A Albargouthi
- Marwan Barghouti
- Marwan Bargouti
- Phone and address:
- 8 Crescent Vischer Ferry Rd, Clifton Park Center, NY 12065
Marwan Albarghouti Phones & Addresses
- 8 Crescent Vischer Ferry Rd, Clifton Park, NY 12065
- 8 Mohawk Trl APT 5874, Clifton Park, NY 12065 • 5183739390
- 8 Mohawk Trl, Clifton Park, NY 12065
- Halfmoon, NY
- Fayetteville, AR
- 8 Mohawk Trl APT 5874, Clifton Park, NY 12065
Us Patents
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Low Temperature Production Of Large-Grain Polycrystalline Semiconductors
view source -
US Patent:7202143, Apr 10, 2007
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Filed:Oct 25, 2004
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Appl. No.:10/972760
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Inventors:Hameed A. Naseem - Fayetteville AR, US
Marwan Albarghouti - Loudonville NY, US -
Assignee:The Board of Trustees of the University of Arkansas - Little Rock AR
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International Classification:H01L 21/20
H01L 29/76 -
US Classification:438486, 257 66
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Abstract:An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.
Get Report for Marwan Albarghouti from Halfmoon, NY, age ~51