Mikhail E Korolik from 1818 Fumia Pl, San Jose, CA 95131, age 55, Phone: 4084376175

Us Patents

Stress Free Etch Processing In Combination With A Dynamic Liquid Meniscus
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US Patent:

7078344, Jul 18, 2006
Filed:

Jan 30, 2004
Appl. No.:

10/769498
Inventors:

Michael Ravkin - Sunnyvale CA, US
Mikhail Korolik - San Jose CA, US
Puneet Yadav - Fremont CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

H01L 21/302
US Classification:

438692, 438 5
Abstract:

A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.

Method And Apparatus For Thin Metal Film Thickness Measurement
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US Patent:

7204639, Apr 17, 2007
Filed:

Sep 26, 2003
Appl. No.:

10/672019
Inventors:

Yehiel Gotkis - Fremont CA, US
Mikhail Korolik - San Jose CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

G01N 25/00
G01J 5/00
US Classification:

374 7, 374121
Abstract:

A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.

Apparatus And Method For Providing A Confined Liquid For Immersion Lithography
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US Patent:

7367345, May 6, 2008
Filed:

Apr 28, 2004
Appl. No.:

10/834548
Inventors:

David Hemker - San Jose CA, US
Fred C. Redeker - Fremont CA, US
John Boyd - Atascadero CA, US
John M. de Larios - Palo Alto CA, US
Michael Ravkin - Sunnyvale CA, US
Mikhail Korolik - San Jose CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

B08B 3/10
B08B 7/04
G03C 5/00
US Classification:

134 952, 134 991, 134115 R, 134902, 355 30
Abstract:

A method for processing a substrate is provided which includes generating a meniscus on the surface of the substrate and applying photolithography light through the meniscus to enable photolithography processing of a surface of the substrate.

Method And Apparatus For Processing Wafer Surfaces Using Thin, High Velocity Fluid Layer
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US Patent:

7383843, Jun 10, 2008
Filed:

Jun 30, 2004
Appl. No.:

10/882835
Inventors:

Michael Ravkin - Sunnyvale CA, US
Michael G. R. Smith - Dublin CA, US
John M. de Larios - Palo Alto CA, US
Fritz Redeker - Fremont CA, US
Mikhail Korolik - San Jose CA, US
Christian DiPietro - Sunnyvale CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

B08B 3/00
F26B 5/04
US Classification:

134 952, 134 991, 134902, 34407
Abstract:

Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Method And Apparatus For Transporting A Substrate Using Non-Newtonian Fluid
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US Patent:

7416370, Aug 26, 2008
Filed:

Jun 15, 2005
Appl. No.:

11/154129
Inventors:

John M. de Larios - Palo Alto CA, US
Mike Ravkin - Sunnyvale CA, US
John Parks - Hercules CA, US
Mikhail Korolik - San Jose CA, US
Fred C. Redeker - Fremont CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

B65G 51/16
US Classification:

406 27, 406 26, 406146
Abstract:

A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.

Methods For Processing Wafer Surfaces Using Thin, High Velocity Fluid Layer
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US Patent:

7534307, May 19, 2009
Filed:

May 30, 2008
Appl. No.:

12/129679
Inventors:

Michael Ravkin - Sunnyvale CA, US
Michael G. R. Smith - Dublin CA, US
John M. de Larios - Palo Alto CA, US
Fritz Redeker - Fremont CA, US
Mikhail Korolik - San Jose CA, US
Christian DiPietro - Sunnyvale CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

B08B 5/04
B08B 3/04
US Classification:

134 21, 134 30, 134 36
Abstract:

Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.

Method And Apparatus For Cleaning Semiconductor Wafers Using Compressed And/Or Pressurized Foams, Bubbles, And/Or Liquids
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US Patent:

7568490, Aug 4, 2009
Filed:

Dec 23, 2003
Appl. No.:

10/746114
Inventors:

John M. de Larios - Santa Clara CA, US
Mike Ravkin - Santa Clara CA, US
Jeffrey Farber - Delmar NY, US
Mikhail Korolik - San Jose CA, US
Fritz Redeker - Fremont CA, US
Aleksander Owczarz - San Jose CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

B08B 3/00
US Classification:

1341022, 1341001, 1341021, 134137, 134142, 134157, 134 991, 134902, 15634551, 15634555
Abstract:

An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer, such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer, is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

Method And Apparatus For Thin Metal Film Thickness Measurement
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US Patent:

7581875, Sep 1, 2009
Filed:

Feb 28, 2007
Appl. No.:

11/713233
Inventors:

Yehiel Gotkis - Fremont CA, US
Mikhail Korolik - San Jose CA, US
Assignee:

Lam Research Corporation - Fremont CA
International Classification:

G01N 25/00
G01K 1/00
US Classification:

374 7, 374 6, 374 45, 374 57, 374141
Abstract:

A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.