Nels P Ostrom

US Patent:

20080290799, Nov 27, 2008

Filed:

Jan 25, 2005

Appl. No.:

11/042228

Inventors:

J. Gary Eden - Mahomet IL, US
Kuo-Feng Chen - Urbana IL, US
Nels P. Ostrom - Champaign IL, US
Sung-Jin Park - Champaign IL, US

Assignee:

The Board of Trustees of the University of Illinois - Urbana IL

International Classification:

H01J 17/49

US Classification:

313582

Abstract:

A method for fabricating microcavity discharge devices and arrays of devices. The devices are fabricated by layering a dielectric on a first conducting layer. A second conducting layer or structure is overlaid on the dielectric layer. In some devices, a microcavity is created that penetrates the second conducting layer or structure and the dielectric layer. In other devices, the microcavity penetrates to the first conducting layer. The second conducting layer or structure together with the inside face of the microcavity is overlaid with a second dielectric layer. The microcavities are then filled with a discharge gas. When a time-varying potential of the appropriate magnitude is applied between the conductors, a microplasma discharge is generated in the microcavity. These devices can exhibit extended lifetimes since the conductors are encapsulated, shielding the conductors from degradation due to exposure to the plasma. Some of the devices are flexible and the dielectric can be chosen to act as a mirror.

US Patent:

20120056135, Mar 8, 2012

Filed:

Sep 1, 2011

Appl. No.:

13/224019

Inventors:

John P. DeLuca - Chesterfield MO, US
Bayard K. Johnson - Jefferson Hills PA, US
William L. Luter - St. Charles MO, US
Neil D. Middendorf - St. Louis MO, US
Dick S. Williams - St. Charles MO, US
Nels Patrick Ostrom - Worden IL, US
James N. Highfill - St. Paul MO, US

International Classification:

H01B 1/04
B65D 85/84
C30B 15/04

US Classification:

252512, 117 21, 2065241

Abstract:

A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.