Patrick J Lacour

US Patent:

6703167, Mar 9, 2004

Filed:

Apr 18, 2001

Appl. No.:

09/837889

Inventors:

Patrick Joseph LaCour - McKinney TX 75070

International Classification:

G03F 900

US Classification:

430 5

Abstract:

The present invention comprises a method and apparatus for prioritizing the implementation of resolution-enhancing mask corrections such as scattering bars on lithography tools. Prioritizing conflicting resolution-enhancing mask corrections produces a lithography tool having improved fidelity because corrections that provide the most beneficial effects can be implemented at the expense of corrections that provide less benefit. In a preferred embodiment, the prioritization is based on the geometry of the conflicting correction. For example, assist features that are closer to their respective generating edge may be assigned higher priorities, and assist features generated from orthogonal edges may be assigned higher priorities than features generated from angled edges.

US Patent:

6728946, Apr 27, 2004

Filed:

Oct 31, 2000

Appl. No.:

09/703294

Inventors:

Franklin M. Schellenberg - Palo Alto CA 94306
Patrick J. LaCour - McKinney TX 75070

International Classification:

G06F 1750

US Classification:

716 19, 716 20, 716 21

Abstract:

An embodiment of the present invention described and shown in the specification is a system for optimizing data used in creating a photolithographic mask. The system reads a definition of a layer of wafer to be created with a photolithographic mask and defines a number of polygons corresponding to conventional patterns on a mask and polygons corresponding to areas on the mask that are phase shifters. A number of data layers are created and the polygons that define phase shifting areas that shift the phase of light by differing amounts of are grouped in different data layers. Once separated, the system analyzes the polygons in each data layer against one or more design rules and assigns a phase shift amount to all the polygons in a data layer in accordance with the analysis. The polygon definitions in each data layer are then given to a mask maker to fabricate a photolithographic mask. It is emphasized that this abstract is being provided to comply with the rules requiring an abstract and will not be used to interpret or limit the scope or meaning of the claims under 37 C. F. R. Â1. 72(b).

US Patent:

6799313, Sep 28, 2004

Filed:

Jun 4, 2003

Appl. No.:

10/453959

Inventors:

Patrick Joseph LaCour - McKinney TX 75070

International Classification:

G06F 1750

US Classification:

716 21, 716 8, 716 12, 716 19

Abstract:

The present invention comprises a method and apparatus for classifying edges for implementing mask corrections. In one embodiment, classifications are based upon proximity ranges bounded on one side only. Before classifying an edge in a first class based on a first proximity range, it is verified that the classification will produce a correction satisfying a minimum manufacturable length. If the prescribed correction for the first class does produce a correction satisfying the minimum manufacturable length, the edge is classified in a second class corresponding to a second proximity range to produce, in combination with an adjacent edge also in the second class, manufacturable correction. The number of mask corrections implemented in a mask design is thus increased while ensuring that all mask corrections meet guidelines for manufacturability and reducing required clean-up of nonmanufacturable corrections in the design.

US Patent:

6901574, May 31, 2005

Filed:

Feb 9, 2001

Appl. No.:

09/781128

Inventors:

Patrick J. LaCour - McKinney TX, US
Emile Sahouria - San Jose CA, US
Siqiong You - San Jose CA, US

International Classification:

G06F017/50
G06F009/45
G06F009/455
G03F009/00
G03C005/00

US Classification:

716 19, 716 5, 716 11, 716 21, 430 5, 430 30

Abstract:

A method of translating device layout data to a format for a mask writing tool includes the acts of reading a file defining a number of cells that represent structures on the device. One or more cells are selected and one or more modified cells based on the interaction of the selected cells with other cells in the device layout are created. One or more additional cells is created that will create structures on the mask that are not formed by writing files corresponding to the modified cells and areas that prevent extraneous structures from being formed on the mask at a selected location by the writing of the files corresponding to the modified cells. A jobdeck for the mask writing tool is created that indicates where the files corresponding to modified cells and the one or more additional cells should be written to create one or more masks or reticles.

US Patent:

7174531, Feb 6, 2007

Filed:

Mar 26, 2004

Appl. No.:

10/811418

Inventors:

Franklin M. Schellenberg - Palo Alto CA, US
Patrick J. LaCour - McKinney TX, US

International Classification:

G06F 17/50

US Classification:

716 19, 716 18

Abstract:

An embodiment of the present invention described and shown in the specification is a system for optimizing data used in creating a photolithographic mask. The system reads a definition of a layer of wafer to be created with a photolithographic mask and defines a number of polygons corresponding to conventional patterns on a mask and polygons corresponding to areas on the mask that are phase shifters. A number of data layers are created and the polygons that define phase shifting areas that shift the phase of light by differing amounts of are grouped in different data layers. Once separated, the system analyzes the polygons in each data layer against one or more design rules and assigns a phase shift amount to all the polygons in a data layer in accordance with the analysis. The polygon definitions in each data layer are then given to a mask maker to fabricate a photolithographic mask. It is emphasized that this abstract is being provided to comply with the rules requiring an abstract and will not be used to interpret or limit the scope or meaning of the claims under 37 C. F. R. 1. 72(b).

US Patent:

7861207, Dec 28, 2010

Filed:

Feb 25, 2005

Appl. No.:

11/067504

Inventors:

James Word - Portland OR, US
Nicolas B. Cobb - Sunnyvale CA, US
Patrick J. LaCour - McKinney TX, US

Assignee:

Mentor Graphics Corporation - Wilsonville OR

International Classification:

G06F 17/50
G06F 19/00
G21K 5/00

US Classification:

716 19, 716 20, 716 21, 378 35, 700121

Abstract:

A method of performing a resolution enhancement technique such as OPC on an initial layout description involves fragmenting a polygon that represents a feature to be created into a number of edge fragments. One or more of the edge fragments is assigned an initial simulation site at which the image intensity is calculated. Upon calculation of the image intensity, the position and/or number of initial simulation sites is varied. New calculations are made of the image intensity with the revised placement or number of simulation sites in order to calculate an OPC correction for the edge fragment. In other embodiments, fragmentation of a polygon is adjusted based on the image intensities calculated at the simulation sites. In one embodiment, the image intensity gradient vector calculated at the initial simulation sites is used to adjust the simulation sites and/or fragmentation of the polygon.

US Patent:

8566753, Oct 22, 2013

Filed:

Dec 17, 2010

Appl. No.:

12/972097

Inventors:

James Word - Portland OR, US
Nicolas B. Cobb - Sunnyvale CA, US
Patrick J. LaCour - McKinney TX, US

Assignee:

Mentor Graphics Corporation - Wilsonville OR

International Classification:

G06F 17/50

US Classification:

716 50, 716 51, 716 52, 716 53, 716 55, 716112

Abstract:

A method of performing a resolution enhancement technique such as OPC on an initial layout description involves fragmenting a polygon that represents a feature to be created into a number of edge fragments. One or more of the edge fragments is assigned an initial simulation site at which the image intensity is calculated. Upon calculation of the image intensity, the position and/or number of initial simulation sites is varied. New calculations are made of the image intensity with the revised placement or number of simulation sites in order to calculate an OPC correction for the edge fragment. In other embodiments, fragmentation of a polygon is adjusted based on the image intensities calculated at the simulation sites. In one embodiment, the image intensity gradient vector calculated at the initial simulation sites is used to adjust the simulation sites and/or fragmentation of the polygon.

US Patent:

20030014731, Jan 16, 2003

Filed:

Jul 10, 2001

Appl. No.:

09/901839

Inventors:

Patrick LaCour - McKinney TX, US

International Classification:

G06F017/50

US Classification:

716/021000

Abstract:

The present invention comprises a method and apparatus for classifying edges for implementing mask corrections. In one embodiment, classifications are based upon proximity ranges bounded on one side only. Before classifying an edge in a first class based on a first proximity range, it is verified that the classification will produce a correction satisfying a minimum manufacturable length. If the prescribed correction for the first class does produce a correction satisfying the minimum manufacturable length, the edge is classified in a second class corresponding to a second proximity range to produce, in combination with an adjacent edge also in the second class, a manufacturable correction. The number of mask corrections implemented in a mask design is thus increased while ensuring that all mask corrections meet guidelines for manufacturability and reducing required clean-up of nonmanufacturable corrections in the design.