Paul T Fabiano

US Patent:

20130270362, Oct 17, 2013

Filed:

May 22, 2013

Appl. No.:

13/900028

Inventors:

Dennis R. Stucky - Long Valley NJ, US
Paul Thomas Fabiano - Lebanon NH, US
Darren M. Simonelli - Seabrook NH, US
Matthew C. Farrell - Revere MA, US
Robert P. Couilliard - Plaistow NH, US

International Classification:

C23C 16/455

US Classification:

2392251

Abstract:

A showerhead apparatus for a linear batch CVD system includes a movable showerhead, one or more gas supply conduits, and a translation mechanism. Each gas supply conduit provides a precursor gas to the showerhead. The showerhead includes conduits and channels arranged along the length of the showerhead to distribute precursor gas to the surfaces of substrates. The small distance between the substrates and the showerhead limits precursor gas flows from the channels to a small portion of each substrate beneath the showerhead. During a deposition process run, the translation mechanism causes the showerhead to move back and forth over the substrates along a direction perpendicular to a linear arrangement of the substrates. Parasitic deposition within the deposition chamber is substantially reduced in comparison to conventional showerhead apparatus. The ability to accurately control the precursor gas flows and the motion of the showerhead allows for improved thickness uniformity and device yield.

US Patent:

6368404, Apr 9, 2002

Filed:

Apr 23, 1999

Appl. No.:

09/298079

Inventors:

Alexander I. Gurary - Bridgewater NJ
Paul Thomas Fabiano - Lebanon NJ
David Russell Voorhees - Hopewell NJ
Scott Beherrell - Phillipsburg NJ

Assignee:

Emcore Corporation - Somerset NJ

International Classification:

C30B 2512

US Classification:

117 89, 117 92, 117103, 117951, 118724, 118725

Abstract:

A chemical vapor deposition reactor includes a pancake type induction heating device to achieve operating temperature within the reactor chamber. By design of the susceptor, the induction magnetic force created at the top surface of the susceptor is insufficient to effect levitation of the wafer carrier during epitaxial deposition at high temperatures in the order of about 1500-1800Â C.