Peter I Porshnev

US Patent:

6863019, Mar 8, 2005

Filed:

May 30, 2002

Appl. No.:

10/159794

Inventors:

Shamouil Shamouilian - San Jose CA, US
Canfeng Lai - Fremont CA, US
Michael Santiago Cox - Davenport CA, US
Padmanabhan Krishnaraj - San Francisco CA, US
Tsutomu Tanaka - Santa Clara CA, US
Sebastien Raoux - Cupertino CA, US
Peter I. Porshnev - San Jose CA, US
Thomas Nowak - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C016/00
C23F001/00
H01L021/306

US Classification:

118723R, 118715, 15634529, 15634535, 134 11, 134 12

Abstract:

A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

US Patent:

7160521, Jan 9, 2007

Filed:

Jan 13, 2003

Appl. No.:

10/342121

Inventors:

Peter Porshnev - San Jose CA, US
Sebastien Raoux - Cupertino CA, US
Mike Woolston - San Jose CA, US
Christopher L. Aardahl - Richland WA, US
Rick J. Orth - Kennewick WA, US
Kenneth G. Rappe - Richland WA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B01J 19/08

US Classification:

42218604

Abstract:

A substrate processing apparatus has a process chamber and an effluent treatment reactor. The process chamber has a substrate support, a process gas supply, a gas energizer, and an exhaust conduit. The effluent treatment reactor has an effluent inlet to receive effluent from the exhaust conduit of the process chamber, a plasma cell having one or more electrodes electrically connected to a voltage source adapted to electrically bias the electrodes to couple energy to effluent received in the plasma cell, a scrubbing cell coaxially exterior to the plasma cell, the scrubbing cell having a scrubbing fluid inlet to introduce scrubbing fluid into effluent in the scrubbing cell and a scrubbing fluid outlet, and an effluent outlet to release the treated effluent.

US Patent:

7532952, May 12, 2009

Filed:

Mar 14, 2007

Appl. No.:

11/686012

Inventors:

Mark W. Curry - Morgan Hill CA, US
Sebastien Raoux - Santa Clara CA, US
Peter Porshnev - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G05D 11/00

US Classification:

700282

Abstract:

In one aspect, improved methods and apparatus for pressure control in an electronic device manufacturing system are provided. The method includes acquiring information related to a current state of the electronic device manufacturing system, determining a desired value of a first parameter of the electronic device manufacturing system based on the acquired information and adjusting at least one parameter of a pump to obtain the desired value of the first parameter of the electronic device manufacturing system.

US Patent:

7601264, Oct 13, 2009

Filed:

Oct 4, 2006

Appl. No.:

11/538467

Inventors:

Josh H. Golden - Santa Cruz CA, US
Timothy Weidman - Sunnyvale CA, US
Peter Porshnev - San Jose CA, US
Kalyan Sista - Sunnyvale CA, US
Nikhil Krishnan - New York NY, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C02F 1/28
C02F 1/42

US Classification:

210662, 210664, 210665, 210667, 210669, 210681, 210688, 210719, 210737, 210912

Abstract:

Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e. g. , copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e. g. , steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e. g.

US Patent:

7651384, Jan 26, 2010

Filed:

Jan 9, 2007

Appl. No.:

11/621497

Inventors:

Josh H. Golden - Santa Cruz CA, US
Peter I. Porshnev - San Jose CA, US
Donald Myers - Nampa ID, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B24B 57/00

US Classification:

451 6, 451 60, 451 41

Abstract:

The present invention generally comprises a method and an apparatus for recycling electrochemical mechanical polishing (ECMP) fluid. A selected portion of used ECMP fluid may be delivered to a recycling unit where the fluid may be refurbished. The concentration of the components that are present in the selected portion of used ECMP fluid may be measured. Based upon the measurements, individual components of the ECMP fluid may be selectively dosed into the selected portion in an amount sufficient to ensure that the selected portion of used ECMP fluid, once refurbished, contains the appropriate concentration of components. Alternatively, a predetermined amount of virgin ECMP fluid may be added to the selected portion. The refurbished ECMP fluid may be recycled into an ECMP system for use in another ECMP process.

US Patent:

7659184, Feb 9, 2010

Filed:

Feb 25, 2008

Appl. No.:

12/072495

Inventors:

Manoj Vellaikal - Sunnyvale CA, US
Kartik Santhanam - Fremont CA, US
Yen B. Ta - Cupertino CA, US
Martin A. Hilkene - Gilroy CA, US
Matthew D. Scotney-Castle - Morgan Hill CA, US
Canfeng Lai - Fremont CA, US
Peter I. Porshnev - San Jose CA, US
Majeed A. Foad - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/20

US Classification:

438480, 438506, 438514, 438766, 438E21568

Abstract:

In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

US Patent:

7674723, Mar 9, 2010

Filed:

Feb 6, 2008

Appl. No.:

12/069425

Inventors:

Peter I. Porshnev - San Jose CA, US
Majeed A. Foad - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31
H01L 21/469
C23C 16/00

US Classification:

438771, 118723 R, 118723 E

Abstract:

In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0. 5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape.

US Patent:

7723219, May 25, 2010

Filed:

Feb 22, 2008

Appl. No.:

12/072118

Inventors:

Kartik Santhanam - Fremont CA, US
Peter I. Porshnev - San Jose CA, US
Majeed A. Foad - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/425

US Classification:

438515, 438513, 257E21316, 257E21143

Abstract:

In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctuations to 5% or less.