Methods and systems for non-invasive RF circuit testing, and/or for RF signal redirection, are disclosed. These methods and systems are used in conjunction with an RF circuit having a first circuit element, a second circuit element, a microstrip line coupling the first circuit element to the second circuit element, such that RF power flows along the microstrip line from the first circuit element to the second circuit element, and an RF test port for testing the RF circuit. A first removable electrical impedance is placed in physical proximity to the microstrip line to produce a first impedance mismatch at the microstrip line, such that some RF power is reflected by the mismatch back to the first circuit element. A second removable electrical impedance is placed in physical proximity to the microstrip line, such that the microstrip line is coupled to the RF test port.
Silicon Photodiode For Monolithic Integrated Circuits And Method For Making Same
Janet L. Benton - Warren NJ Renuka P. Jindal - Berkeley Heights NJ Ya-Hong Xie - Flemington NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 3112
US Classification:
437 3
Abstract:
An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.
Silicon Photodiode For Monolithic Integrated Circuits
Janet L. Benton - Warren NJ Renuka P. Jindal - Berkeley Heights NJ Ya-Hong Xie - Flemington NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 2714
US Classification:
257292
Abstract:
An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.
A system for testing a circuit which includes a receive section, a transmit section and a lock-out circuit for preventing the receive and transmit sections to be operative at the same time. The receive section has an input for receiving digital signals and an output for producing thereat analog signals corresponding to the digital signals at its input. The transmit section has an input for receiving analog signals and an output for producing thereat digital signals corresponding to the analog signals at its input. The lock-out circuit is coupled between the receive and transmit sections for disabling the transmit section while signals are being propagated in the receive section and for disabling the receive section while signals are being propagated in the transmit section. The system includes a tester for supplying a test signal pattern to the input of the receive section, and a delay network placed along a transmission path between the output of the first section and a point along the transmission path of the second section for delaying the propagation of the signal through the second section until the disabling signal to the second section is removed.