Richard B Patty

US Patent:

6646660, Nov 11, 2003

Filed:

Sep 29, 2000

Appl. No.:

09/675993

Inventors:

Richard B. Patty - Buda TX

Assignee:

Advanced Micro Devices Inc. - Austin TX

International Classification:

G09G 500

US Classification:

345965, 700 17, 700 83, 700121, 700108, 700174, 700116, 700180

Abstract:

A method for presenting performance data from a process flow includes providing a tool link associated with a first subset of the performance data for at least one tool in the process flow; providing a recipe link associated with a second subset of the performance data for at least one recipe in the process flow; displaying the first subset of the performance data in response to the tool link being selected; and displaying the second subset of the performance data in response to the recipe link being selected.

US Patent:

6839713, Jan 4, 2005

Filed:

Jul 12, 2001

Appl. No.:

09/905213

Inventors:

Yurong Shi - Austin TX, US
Richard Bruce Patty - Austin TX, US
Russell Clinton Brown - Austin TX, US

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

G06F 1730

US Classification:

707101, 707100, 707104, 707 3

Abstract:

The functionality of various process control and data collection system embodiments may be improved by employing the database methodology disclosed herein during the requirements-analysis phase for data collection and process control in a semiconductor manufacturing environment. The relational database storage technology as disclosed herein consists of a set of interconnected tables, where each table has a field or an amalgamation of fields (primary key) that uniquely identifies each record (tuple) in the table. In addition, the method as disclosed herein utilizes foreign keys, which represent the value of a primary key for a related table. Aggregation levels are also employed in the method as disclosed herein to associate data from various production.

US Patent:

6970758, Nov 29, 2005

Filed:

Jul 12, 2001

Appl. No.:

09/905220

Inventors:

Yurong Shi - Austin TX, US
David Alan Richardson - Austin TX, US
Russell Clinton Brown - Austin TX, US
Donald Craig Likes - Austin TX, US
Richard Bruce Patty - Buda TX, US

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

G06F019/00

US Classification:

700108, 700 51, 700121

Abstract:

In its various embodiments, the method collects data from process and metrology tools in a semiconductor manufacturing environment, generates statistics from that data, detects tool failures, processing errors, and other conditions that can jeopardize product output, and performs high level process control in the form of tool shutdowns, lot holds, and lot releases. One method as disclosed automates the collection and recording of data from process and metrology tools, automates configuration of data collection, and automates process equipment shut downs, all within the existing framework of existing MES systems and engineering data collection systems. Automation of configurations and data collection is conducted by creation of data collection plans, data collection capability specifications, and other versioned documents within a process control and data collection system as disclosed herein. These versioned documents may be generated through a common graphical user interface and presented via an Internet web browser or other network interface.

US Patent:

60467967, Apr 4, 2000

Filed:

Apr 22, 1998

Appl. No.:

9/064470

Inventors:

Richard J. Markle - Austin TX
Michael J. Gatto - Austin TX
Chris A. Nauert - Austin TX
Yi Cheng - Dallas TX
Richard B. Patty - Austin TX

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

G01N 2162
G01N 3100

US Classification:

356 72

Abstract:

In a semiconductor process which utilizes a plasma within a process tool chamber, a method of using optical emission spectroscopy (OES) to monitor a particular parameter of the process is disclosed. A first wavelength present in the plasma is determined which varies highly in intensity depending on the particular parameter by observing a statistically significant sample representing variations of the particular parameter. A second wavelength of chemical significance to the process is also determined which is relatively stable in intensity over time irrespective of variations of the particular parameter, also by observing a statistically significant sample representing variations of the particular parameter. These two wavelengths may be determined from test wafers and off-line physical measurements. Then, the intensity of the first and second wavelengths present in the plasma is measured on-line during normal processing within the process tool chamber, and the ratio between the first and second wavelength's respective intensities generates a numeric value which is correlated to the particular parameter.