Richard W Solarz from 79 Hillview Dr, Danville, CA 94506, age 76, Phone: 9257366345

Isbn (Books And Publications)

Laser Spectroscopy And Its Applications
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Author:

Richard W. Solarz
ISBN #:

0824775252

Richard Solarz

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Location:

San Francisco Bay Area

Industry:

Semiconductors

Richard Solarz

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Us Patents

Microchannel Cooled Edge Cladding To Establish An Adiabatic Boundary Condition In A Slab Laser
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US Patent:

6738399, May 18, 2004
Filed:

May 17, 2001
Appl. No.:

09/861495
Inventors:

Georg F. Albrecht - Livermore CA
Raymond J. Beach - Livermore CA
Richard W. Solarz - Danville CA
Assignee:

The United States of America as represented by the United States Department of Energy - Washington DC
International Classification:

H01S 304
US Classification:

372 35, 372 11, 372 33
Abstract:

The present invention provides an edge cladding for a slab laser, the edge cladding comprising a cooling channel system therein.

Coherent Duv Illumination For Semiconductor Wafer Inspection
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US Patent:

7295739, Nov 13, 2007
Filed:

Feb 18, 2005
Appl. No.:

11/061150
Inventors:

Richard William Solarz - Danville CA, US
Assignee:

KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:

G02B 6/02
US Classification:

385125, 385122, 385123, 385126, 359285, 359342, 359334
Abstract:

An apparatus for inspecting a specimen, such as a semiconductor wafer, is provided. The apparatus comprises a laser energy source, such as a deep ultraviolet (DUV) energy source and an optical fiber arrangement. The optical fiber arrangement comprises a core surrounded by a plurality of optical fibers structures used to frequency broaden energy received from the laser energy source into frequency broadened radiation. The frequency broadened radiation is employed as an illumination source for inspecting the specimen. In one aspect, the apparatus comprises a central core and a plurality of structures generally surrounding the central core, the plurality of fibers surround a hollow core fiber filled with a gas at high pressure, a tapered photonic fiber, and/or a spider web photonic crystalline fiber, configured to receive light energy and produce frequency broadened radiation for inspecting the specimen.

Indium Rich Ingan Led Line Monitor
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US Patent:

8218221, Jul 10, 2012
Filed:

Aug 20, 2008
Appl. No.:

12/195271
Inventors:

Richard W. Solarz - Danville CA, US
Assignee:

KLA-Tencor Corporation - Milpitas CA
International Classification:

G02F 1/03
G02F 1/01
H01L 29/06
H01S 5/00
US Classification:

359244, 359240, 257 14, 372 45012
Abstract:

A method of generating a photoluminescence map for an indium gallium nitride (InGaN) well can include presenting data on a pixel by pixel basis. The data can be generated as a function of emission wavelength, line width of emission, polarization of emission, and intensity of emission. The data can also be generated as a function of excitation polarization and polarization angle orientation with respect to film crystalline axes of the InGaN well. The data can also be generated as a function of multiple wavelengths of light to generate the photoluminescence map. The photoluminescence maps can be correlated to device internal quantum efficiency as measured in test devices. The resulting correlation maps can serve as line monitors of indium rich InGaN wafers used for green LEDs.

Euv High Throughput Inspection System For Defect Detection On Patterned Euv Masks, Mask Blanks, And Wafers
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US Patent:

8553217, Oct 8, 2013
Filed:

Jun 18, 2010
Appl. No.:

12/812950
Inventors:

Yung-Ho Chuang - Cupertino CA, US
Richard W. Solarz - Danville CA, US
David R. Shafer - Fairfield CT, US
David L. Brown - Sunnyvale CA, US
Assignee:

KLA-Tencor Corporation - Milpitas CA
International Classification:

G01N 21/00
US Classification:

3562375
Abstract:

Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Optical Imaging System With Laser Droplet Plasma Illuminator
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US Patent:

8575576, Nov 5, 2013
Filed:

Feb 14, 2011
Appl. No.:

13/026926
Inventors:

Richard W. Solarz - Danville CA, US
Stephane P. Durant - Mountain View CA, US
Assignee:

KLA-Tencor Corporation - Milpitas CA
International Classification:

G01J 3/10
G01J 1/58
US Classification:

250504R, 2504581, 2504591
Abstract:

A wafer inspection system includes a laser droplet plasma (LDP) light source that generates light with sufficient radiance to enable bright field inspection at wavelengths down to 40 nanometers. Light generated by the LDP source is directed to the wafer and light from the illuminated wafer is collected by a high NA objective with all reflective elements. A detector detects the collected light for further image processing. The LDP source includes a droplet generator that dispenses droplets of a feed material. An excitation light generated by a laser is focused on a droplet of the feed material. The interaction of the excitation light with the droplet generates a plasma that emits illumination light with a radiance of at least 10 W/mm-sr within a spectral range from 40 nanometers to 200 nanometers.

Coherent Duv Illumination For Semiconductor Wafer Inspection
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US Patent:

8649646, Feb 11, 2014
Filed:

Oct 24, 2007
Appl. No.:

11/977490
Inventors:

Richard William Solarz - Danville CA, US
Assignee:

KLA-Tencor Corporation - Milpitas CA
International Classification:

G02B 6/00
US Classification:

385125, 385122, 385123, 385126, 359285, 359342, 250504 R
Abstract:

An apparatus for inspecting a specimen, such as a semiconductor wafer, is provided. The apparatus comprises a laser energy source, such as a deep ultraviolet (DUV) energy source and an optical fiber arrangement. The optical fiber arrangement comprises a core surrounded by a plurality of optical fibers structures used to frequency broaden energy received from the laser energy source into frequency broadened radiation. The frequency broadened radiation is employed as an illumination source for inspecting the specimen. In one aspect, the apparatus comprises a central core and a plurality of structures generally surrounding the central core, the plurality of fibers surround a hollow core fiber filled with a gas at high pressure, a tapered photonic fiber, and/or a spider web photonic crystalline fiber, configured to receive light energy and produce frequency broadened radiation for inspecting the specimen.

Multi-Wavelength Pumping To Sustain Hot Plasma
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US Patent:

20110291566, Dec 1, 2011
Filed:

Feb 12, 2010
Appl. No.:

13/119491
Inventors:

Ilya V. Bezel - Sunnyvale CA, US
Anatoly Shchemelinin - Pleasanton CA, US
Eugene Shifrin - Sunnyvale CA, US
Matthew W. Derstine - Los Gatos CA, US
Richard W. Solarz - Danville CA, US
Assignee:

KLA-TENCOR CORPORATION - Milpitas CA
International Classification:

H05H 1/24
US Classification:

31511121
Abstract:

A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.

High Throughput Hot Testing Method And System For High-Brightness Light-Emitting Diodes
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US Patent:

20130119275, May 16, 2013
Filed:

Nov 9, 2012
Appl. No.:

13/673947
Inventors:

Richard W. Solarz - Danville CA, US
Assignee:

KLA-Tencor Corporation - Milpitas CA
International Classification:

G01R 31/44
US Classification:

2504591, 324414
Abstract:

A method of performing a hot test of a wafer-level, packaged high-brightness phosphor converted light-emitting diode (pc-HBLED) includes selectively heating portions of the phosphor layer using a laser to provide a predetermined temperature gradient in the phosphor layer. The selective heating can directly heat the silicone in a silicone-based phosphor layer, or directly heat the active ion(s) of the phosphor in a Lumiramic™-based phosphor or even the active ion(s) of a silicone-based phosphor layer. A current is applied to the InGaN film to establish a predetermined temperature at the InGaN film junction, the film junction being adjacent to the phosphor layer. Photometric measurements are performed on the HBLED after the selective heating and during the applied electroluminescent current. This method quickly establishes the temperatures and temperature gradients in the HBLED consistent with those of an operating, product-level HBLED, thereby ensuring accurate binning of the HBLED.