Sean H Kellogg

US Patent:

8253118, Aug 28, 2012

Filed:

Oct 14, 2009

Appl. No.:

12/579237

Inventors:

Shouyin Zhang - Portland OR, US
Tom Miller - Portland OR, US
Sean Kellogg - Portland OR, US
Anthony Graupera - Hillsboro OR, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

H01J 49/10
H01J 27/02

US Classification:

25049221, 250397, 250398

Abstract:

A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

US Patent:

8633452, Jan 21, 2014

Filed:

Jul 13, 2011

Appl. No.:

13/182187

Inventors:

Anthony Graupera - Hillsboro OR, US
Sean Kellogg - Portland OR, US
Mark W. Utlaut - Scappoose OR, US
N. William Parker - Hillsboro OR, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

H01J 27/00

US Classification:

250423R, 250430, 31511151, 31511181, 31511121, 118723 R

Abstract:

An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.

US Patent:

8642974, Feb 4, 2014

Filed:

Jun 21, 2011

Appl. No.:

13/165556

Inventors:

Sean Kellogg - Portland OR, US
Andrew B. Wells - Portland OR, US
James B. McGinn - Portland OR, US
N. William Parker - Hillsboro OR, US
Mark W. Utlaut - Scappoose OR, US
Anthony Graupera - Hillsboro OR, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

H01J 3/14

US Classification:

250423R

Abstract:

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

US Patent:

20110198511, Aug 18, 2011

Filed:

Feb 23, 2010

Appl. No.:

12/710602

Inventors:

ANTHONY GRAUPERA - Hillsboro OR, US
Sean Kellogg - Portland OR, US
Tom Miller - Portland OR, US
Dustin Laur - Forest Grove OR, US
Shouyin Zhang - Portland OR, US

Assignee:

FEI COMPANY - Hillsboro OR

International Classification:

H01J 3/14
H05H 1/24

US Classification:

250396 R, 31511151

Abstract:

A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

US Patent:

20120032092, Feb 9, 2012

Filed:

Oct 19, 2011

Appl. No.:

13/276731

Inventors:

Anthony Graupera - Hillsboro OR, US
Sean Kellogg - Portland OR, US
Tom Miller - Portland OR, US
Dustin Laur - Forest Grove OR, US
Shouyin Zhang - Portland OR, US
Antonius Bastianus Wilhelmus Dirriwachter - Hillsboro OR, US

Assignee:

FEI COMPANY - Hillsboro OR

International Classification:

H01J 3/14
H05B 37/00
H02J 1/00
H05B 37/02

US Classification:

250396 R, 315291, 315176, 307 1

Abstract:

A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

US Patent:

20120091360, Apr 19, 2012

Filed:

Dec 28, 2011

Appl. No.:

13/338456

Inventors:

Shouyin Zhang - Portland OR, US
Tom Miller - Portland OR, US
Sean Kellogg - Portland OR, US
Anthony Graupera - Hillsboro OR, US

Assignee:

FEI COMPANY - HILLSBORO OR

International Classification:

H01J 3/14
B01J 19/08

US Classification:

250396 R, 2504923

Abstract:

A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

US Patent:

20120261587, Oct 18, 2012

Filed:

Apr 2, 2012

Appl. No.:

13/437599

Inventors:

Sean Kellogg - Portland OR, US
N. William Parker - Hillsboro OR, US
Mark W. Utlaut - Scappoose OR, US
Anthony Graupera - Hillsboro OR, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

G21K 5/04

US Classification:

250396 R

Abstract:

An inductively-coupled plasma source for a focused charged particle beam system includes a conductive shield that provides improved electrical isolation and reduced capacitive RF coupling and a dielectric fluid that insulates and cools the plasma chamber. The conductive shield may be enclosed in a solid dielectric media. The dielectric fluid may be circulated by a pump or not circulated by a pump. A heat tube can be used to cool the dielectric fluid.

US Patent:

20130134855, May 30, 2013

Filed:

Nov 30, 2011

Appl. No.:

13/307830

Inventors:

Sean Kellogg - Portland OR, US
Anthony Graupera - Hillsboro OR, US
N. William Parker - Hillsboro OR, US
Andrew B. Wells - Portland OR, US
Mark W. Utlaut - Scappoose OR, US
Walter Skoczylas - Aloha OR, US
Gregory A. Schwind - Portland OR, US
Shouyin Zhang - Portland OR, US
Noel Smith - Portland OR, US

Assignee:

FEI Company - Hillsboro OR

International Classification:

H01J 1/02
H05H 1/00

US Classification:

313 39, 313237

Abstract:

An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.

Address:

6826 N Monteith Ave, Portland, OR 97203

VIN:

4JGBF22E57A259336

Make:

MERCEDES-BENZ

Model:

GL-CLASS

Year:

2007