Andrew Vogan - Aloha OR, US Jawad B. Khan - Hillsboro OR, US Sowmiya Jayachandran - Portland OR, US
International Classification:
G06F 11/16 H03M 13/15
US Classification:
714773, 714782, 714784, 714E11062, 714E11001
Abstract:
A multiple channel storage device may include a host controller to receive input data from a host device and a buffer memory to store the input data and associated error correcting data prior to downstream storage. Multiple storage channels downstream from the buffer memory may store the input data and associated error correcting data in at least one of the storage channels on a non-volatile storage media. An error correcting engine between the host controller and the buffer memory may perform error correction encoding on the input data from the host device to generate the associated error correcting data for storage in the buffer memory. Such error correcting engine may protect against data errors in the buffer memory and in the storage channels.
Command Completion Detection In A Mass Storage Device
Sowmiya Jayachandran - Portland OR, US Jawad B. Khan - Hillsboro OR, US Randall K. Webb - Hillsboro OR, US Robert W. Faber - Hillsboro OR, US
International Classification:
G06F 3/00
US Classification:
710 19
Abstract:
In some embodiments, after a hold off time following issuance of a memory command has elapsed, a status read operation is performed to determine a status of the memory command. In some embodiments, if the memory command has not yet completed, a polling interval is used to perform a status read operation to determine the status of the memory command after the polling interval has expired, and repeating the process until the memory command has been completed. Other embodiments are described and claimed.
Dynamically Changing Between Latency-Focused Read Operation And Bandwidth-Focused Read Operation
- Santa Clara CA, US Zvika GREENFIELD - Kfar Sava, IL Sowmiya JAYACHANDRAN - Portland OR, US Dimpesh PATEL - Surrey, CA
International Classification:
G06F 3/06 G06F 12/0862
Abstract:
A multilevel memory subsystem includes a persistent memory device that can access data chunks sequentially or randomly to improve read latency, or can prefetch data blocks to improve read bandwidth. A media controller dynamically switches between a first read mode of accessing data chunks sequentially or randomly and a second read mode of prefetching data blocks. The media controller switches between the first and second read modes based on a number of read commands pending in a command queue.
Apparatuses And Methods For Exiting Low Power States In Memory Devices
- BOISE ID, US William Low - Vancouver, CA Sowmiya Jayachandran - Portland OR, US
Assignee:
MICRON TECHNOLOGY, INC. - BOISE ID
International Classification:
G06F 1/3206 G06F 13/42 G06F 1/3287 G06F 1/3234
Abstract:
According to one embodiment, an apparatus is disclosed. The apparatus includes a memory device having a device identification, The apparatus further includes a low power wake circuit configured to receive a low power wake signal and an identification information, and further configured to initiate a transition of the memory device from a low power state to an active state responsive to an active low power wake signal and the wake identification information matching the device identifier.
- Santa Clara CA, US Frank T. HADY - Portland OR, US Paul D. RUBY - Folsom CA, US Kiran PANGAL - Fremont CA, US Sowmiya JAYACHANDRAN - Portland OR, US
International Classification:
G11C 7/10 G11C 11/406 G11C 16/34
Abstract:
In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.
Apparatuses And Methods For Exiting Low Power States In Memory Devices
- BOISE ID, US William Low - Vancouver, CA Sowmiya Jayachandran - Portland OR, US
Assignee:
MICRON TECHNOLOGY, INC. - BOISE ID
International Classification:
G06F 1/32 G06F 13/42
Abstract:
According to one embodiment, an apparatus is disclosed. The apparatus includes a memory device having a device identification. The apparatus further includes a low power wake circuit configured to receive a low power wake signal and an identification information, and further configured to initiate a transition of the memory device from a low power state to an active state responsive to an active low power wake signal and the wake identification information matching the device identifier.
Apparatuses And Methods For Exiting Low Power States In Memory Devices
- BOISE ID, US William Low - Vancouver, CA Sowmiya Jayachandran - Portland OR, US
International Classification:
G06F 1/32 G06F 13/42
Abstract:
According to one embodiment, an apparatus is disclosed. The apparatus includes a memory device having a device identification, The apparatus further includes a low power wake circuit configured to receive a low power wake signal and an identification information, and further configured to initiate a transition of the memory device from a low power state to an active state responsive to an active low power wake signal and the wake identification information matching the device identifier.
PRASHANT S. DAMLE - Portland OR, US FRANK T. HADY - Portland OR, US PAUL D. RUBY - Folsom CA, US KIRAN PANGAL - Fremont CA, US SOWMIYA JAYACHANDRAN - Portland OR, US
International Classification:
G11C 7/10 G11C 11/406
Abstract:
In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.