Tanuj Saxena

US Patent:

20200373426, Nov 26, 2020

Filed:

May 20, 2019

Appl. No.:

16/417243

Inventors:

- Austin TX, US
Feng Li - Austin TX, US
Vishnu Khemka - Chandler AZ, US
Moaniss Zitouni - Gilbert AZ, US
Tanuj Saxena - Chandler AZ, US

International Classification:

H01L 29/78
H01L 27/088
H01L 29/10
H01L 29/66
H01L 21/8234

Abstract:

A MOSFET includes a substrate having a body region of a first conductivity type. A main field effect transistor (mainFET) and a mirror device are formed in the substrate. The mainFET includes first gate trenches, first source regions of a second conductivity type adjacent to the first gate trenches, and first body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the first source regions. The mirror device includes second gate trenches, second source regions of the second conductivity type adjacent to the second gate trenches, second body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the second source regions, and link elements of the first conductivity type interconnecting pairs of the second body implant regions.

US Patent:

20200075393, Mar 5, 2020

Filed:

Aug 30, 2018

Appl. No.:

16/116986

Inventors:

- AUSTIN TX, US
Tanuj Saxena - Chandler AZ, US
Ljubo Radic - Gilbert AZ, US
Bernhard Grote - Phoenix AZ, US

International Classification:

H01L 21/761
H01L 21/762
H01L 21/78
H01L 21/265

Abstract:

A continuous buried doped isolation region in a substrate of a die. The substrate includes an isolation ring structure surrounding a first area of the die. The continuous buried doped isolation region is of a net first conductivity type and is located in the first area. The continuous buried doped isolation region including a first portion having a net first conductivity type dopant concentration of at least a first level located in an interior region of the first area and extending to a sidewall of the isolation ring structure. The first portion does not extend to the sidewall of the isolation ring structure in a location of a corner area of the first area. The corner area is defined by the isolation ring structure. A second portion of the continuous buried doped isolation region in the corner area has a net first conductivity type dopant concentration of a second level that is lower than the first level. The die comprises a semiconductor device located in the first area and including components located in the substrate in the first area above the continuous buried doped isolation region.