Todd M Mcquiston

US Patent:

20020187096, Dec 12, 2002

Filed:

Jun 8, 2001

Appl. No.:

09/877674

Inventors:

James Kendig - Midland MI, US
David Landis - Midland MI, US
Todd McQuiston - Midland MI, US

International Classification:

C01B033/023

US Classification:

423/350000, 423/342000

Abstract:

A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HClSiwhere n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600 C. to 1200 C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.

US Patent:

7033561, Apr 25, 2006

Filed:

May 23, 2002

Appl. No.:

10/472683

Inventors:

James Edward Kendig - Midland MI, US
David Russell Landis - Midland MI, US
Todd Michael McQuiston - Midland MI, US
Michael Matthew Zalar - Midland MI, US

Assignee:

Dow Corning Corporation - Midland MI

International Classification:

C01B 33/02

US Classification:

423349, 423342

Abstract:

A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6—nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600 C. to 1200 C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.