Abstract:
An R. F. power transistor device is disclosed wherein the common lead inductance may be controlled to any desired value from zero to relatively high values. The transistor device includes an insulating member of beryllium oxide to one side of which there may be bonded the usual metal heat sink. On the other side of the beryllium oxide member there are metallized areas to which the input and output ground conductors are bonded, the input lead is bonded, the output lead is bonded and the collector of the transistor chip is bonded. One plate of an MOS capacitor is bonded to the input ground lead. In the case of grounded emitter applications, short, small wires are connected from the emitter areas of the transistor in each direction to the input ground leads and the output ground leads respectively. The base areas of the transistor are connected by short, small wire leads to the other plate areas of the MOS capacitor and to the input lead. The metallizations to which the input ground leads and output ground leads are bonded and the input and output ground leads are separated by gaps.