Terence D Schemmel

US Patent:

57515263, May 12, 1998

Filed:

Feb 24, 1997

Appl. No.:

8/804954

Inventors:

Terence D. Schemmel - Longmont CO

Assignee:

MKE-Quantum Components Colorado LLC - Louisville CO

International Classification:

G11B 533
G11B 5147

US Classification:

360113

Abstract:

A flux enhanced data transducer and method for producing the same in conjunction with shared shields on MR read heads in which substantially between 500-2500. ANG. of a relatively higher magnetic moment material is added to the upper surface of the shared shield, or bottom write head pole, prior to a magnetic flux containment ion milling operation utilizing the upper pole as a mask. The relatively higher magnetic moment flux enhancement layer may comprise CoNiFe, FeN or similar material which is deposited prior to the formation of the dielectric gap layer. The flux enhancement layer may then be selectively removed substantially surrounding the upper pole by means of a relatively brief ion milling process in which only on the order of 1. 0 k. ANG. of the layer need be removed and during which only an insignificant amount of the material removed might be re-deposited on the sides of the upper pole.

US Patent:

56395094, Jun 17, 1997

Filed:

Jul 22, 1996

Appl. No.:

8/681042

Inventors:

Terence D. Schemmel - Longmont CO

Assignee:

Quantum Peripherals Colorado, Inc. - Louisville CO

International Classification:

B05D 512

US Classification:

427130

Abstract:

A flux enhanced data transducer and method for producing the same in conjunction with shared shields on MR read heads in which substantially between 500-2500. ANG. of a relatively higher magnetic moment material is added to the upper surface of the shared shield, or bottom write head pole, prior to a magnetic flux containment ion milling operation utilizing the upper pole as a mask. The relatively higher magnetic moment flux enhancement layer may comprise CoNiFe, FeN or similar material which is deposited prior to the formation of the dielectric gap layer. The flux enhancement layer may then be selectively removed substantially surrounding the upper pole by means of a relatively brief ion milling process in which only on the order of 1. 0 k. ANG. of the layer need be removed and during which only an insignificant amount of the material removed might be re-deposited on the sides of the upper pole.